AON7522E

AON7522E 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application RDS(ON) (at VGS=10V) < 4mΩ RDS(ON) (at VGS = 4.5V) < 6.8mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • DC/DC Converters DFN 3x3 EP Bottom View Top View 30V 34A ID (at VGS=10V) D Top View S 1 8 S S 2 7 3 6 D D D G 4 5 D G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current C V A 136 21 IDSM TA=70°C ±20 27 IDM TA=25°C Units V 34 ID TC=100°C Maximum 30 A 17 Avalanche Current C IAS 35 A Avalanche energy L=0.05mH C EAS 31 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: Mar 2012 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 12 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 -55 to 150 Typ 30 60 3.2 °C Max 40 75 4 Units °C/W °C/W °C/W Page 1 of 6 AON7522E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS,ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=16A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=20A µA 5 1.2 0.8 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ 1.8 ±10 µA 2.2 V 3.2 4 5 6.2 5.3 6.8 62 0.7 mΩ mΩ S 1 V 34 A 1540 pF 485 pF 448 pF 1.7 2.6 Ω 33.4 45 nC 19.7 27 nC 3.3 nC Gate Drain Charge 15.0 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 8.3 ns 24 ns tf Turn-Off Fall Time 10 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 15.2 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 22.2 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using