AON7534

AON7534 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application ID (at VGS=10V) 30V 30A RDS(ON) (at VGS=10V) < 5mΩ RDS(ON) (at VGS = 4.5V) < 8.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7534 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 120 20 IDSM TA=70°C ±20 23 IDM TA=25°C Units V 30 ID TC=100°C Maximum 30 A 16 Avalanche Current C IAS 32 A Avalanche energy L=0.05mH C EAS 26 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev.1.0: April 2016 3 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 9 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 23 -55 to 150 Typ 30 60 4.5 www.aosmd.com °C Max 40 75 5.4 Units °C/W °C/W °C/W Page 1 of 6 AON7534 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd 1.8 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.7 ±100 nA 2.2 V 4.1 5 5.6 6.8 6.7 8.5 91 0.7 1037 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge µA 5 1.4 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ mΩ mΩ S 1 V 28 A 1500 pF 441 pF 61 pF 1.5 2.3 Ω 15.5 22 nC 6.8 10 nC 3.0 nC Gate Drain Charge 3.6 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 3.3 ns 18 ns 4.3 ns IF=20A, dI/dt=500A/µs 12.7 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17.2 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using