AON7566

AON7566 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Current Capability • ESD protected • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 30V 34A RDS(ON) (at VGS=10V) < 3.7mΩ RDS(ON) (at VGS=4.5V) < 5.2mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • NB Battery Pack DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 Pin 1 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7566 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0 : October 2015 IAS 30 A EAS 45 mJ VSPIKE 36 V 30 Steady-State Steady-State W 12 5 RθJA RθJC W 3.2 TJ, TSTG Symbol t ≤ 10s A 23 PDSM Junction and Storage Temperature Range A 28 PD TA=25°C V 135 IDSM TA=70°C ±20 34 IDM TA=25°C Units V 34 ID TC=100°C Maximum 30 -55 to 150 Typ 20 45 3.5 www.aosmd.com Max 25 55 4.2 °C Units °C/W °C/W °C/W Page 1 of 6 AON7566 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.4 ±10 µA 1.9 2.4 V 3.0 3.7 4.5 5.5 5.2 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 4.1 gFS Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A Coss Units 30 VDS=30V, VGS=0V IDSS Max mΩ S 1 V 34 A 3020 pF 330 pF 280 pF 2 3 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 57 80 nC Qg(4.5V) Total Gate Charge 28 40 Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A 1 mΩ nC 9.5 nC Gate Drain Charge 10 nC Turn-On DelayTime 7.5 ns 10 ns 49 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 13 ns IF=20A, di/dt=500A/µs 12 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 20 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZθJC Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.2°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0 : October 2015 www.aosmd.com Page 4 of 6 AON7566 40 40 35 35 30 30 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 15 10 25 20 15 10 5 5 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0 : October 2015 www.aosmd.com Page 5 of 6 AON7566 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0 : October 2015 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6