AON7700L

SRFET TM AON7700 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. - RoHS Compliant. - Halogen Free DFN 3x3 Top View Bottom View Features VDS (V) = 30V (V GS = 10V) ID = 12A RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) D Pin 1 S S S G D D D D G SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current C Continuous Drain Current G Power Dissipation Power Dissipation B Maximum 30 ±12 20 20 80 12 11 33 13 3.1 2 -55 to 150 Units V V TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C A ID IDM IDSM PD PDSM TJ, TSTG A W TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case D °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3.1 Max 40 75 3.7 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7700 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 80 6.7 9 8 27 0.39 0.5 6 3395 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 490 185 1 25 VGS=4.5V, VDS=15V, ID=10A 9.5 8.4 11 VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω IF=12A, dI/dt=100A/µs 16 38 21 28 15 36 1.5 33 4250 8.5 12 10 S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC mΩ 1.7 Min 30 100 500 100 3 Typ Max Units V µA nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating I DSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using