AON7702A_101

AON7702A 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V 36A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 10mΩ RDS(ON) (at VGS = 4.5V) < 13mΩ 100% UIS Tested 100% Rg Tested DFN 3x3A Top View D Bottom View Top View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 80 13.5 IDSM TA=70°C ±12 22 IDM TA=25°C Units V 36 ID TC=100°C Maximum 30 A 11 Avalanche Current C IAS, IAR 15 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 11 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 1: Feb. 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 9 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 23 PD -55 to 150 Typ 30 60 4.5 °C Max 40 75 5.4 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=125°C 100 Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 80 100 nA 2.1 V 8.2 10 12.5 15 VGS=4.5V, ID=11A 9.9 13 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=13A 80 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA 1.65 VGS=10V, ID=13A Output Capacitance Units V 0.5 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ mΩ S 0.7 V 30 A 930 1170 1400 pF VGS=0V, VDS=15V, f=1MHz 90 128 170 pF 45 89 125 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge 7 8.7 10.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=13A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 3.2 nC 3 nC 6 ns 2.4 ns 23 ns 4 IF=13A, dI/dt=500A/µs ns 5.5 7 8.5 5 6.5 8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using