AON7804_101

AON7804 30V Dual N-Channel MOSFET General Description Product Summary The AON7804 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two low RDS (ON) MOSFETs in a dual DFN3x3 package. The AON7804 is well suited for use in compact DC/DC converter applications. VDS 30V 22A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 21mΩ RDS(ON) (at VGS = 4.5V) < 26mΩ 100% UIS Tested 100% Rg Tested ESD protected DFN 3x3A_Dual Bottom View Top View D D Top View Pin 1 D1 G1 D1 S2 D2 G2 D2 S1 G G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: Nov 2010 Steady-State Steady-State A IAS, IAR 19 A EAS, EAR 18 mJ 17 W 7 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 9 PDSM TA=70°C V 7 PD TC=100°C ±20 48 IDSM TA=70°C Units V 14 IDM TA=25°C Continuous Drain Current Maximum 30 22 ID TC=100°C S -55 to 150 Typ 30 60 6.2 °C Max 40 75 7.5 Units °C/W °C/W °C/W Page 1 of 6 AON7804 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 48 VGS=10V, ID=8A TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs µA V 17 21 A mΩ 26 mΩ 1 V 15 A 30 0.75 S 600 740 888 pF 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω 12 15 18 nC 6 7.5 9 nC VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω IF=8A, dI/dt=500A/µs 10 2.4 21 VDS=5V, ID=9A µA 1.8 23 VGS=4.5V, ID=7A Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ 2.5 nC 3 nC 5 ns 3.5 ns 19 ns 3.5 ns 6 8 10 14 18 22 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using