AONR21321

AONR21321 30V P-Channel MOSFET General Description Product Summary • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=-10V) VDS Applications -30V -24A RDS(ON) (at VGS=-10V) < 16.5mΩ RDS(ON) (at VGS=-4.5V) < 29.5mΩ 100% UIS Tested 100% Rg Tested • Notebook AC-in Load Switch • Battery Protection Charge/Discharge DFN 3x3_EP Bottom View Top View Top View PIN1 D 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AONR21321 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: November 2017 IAS 25 A EAS 31 mJ 24 Steady-State Steady-State W 9.6 4.1 RθJA RθJC W 2.6 -55 to 150 TJ, TSTG Symbol t ≤ 10s A -10 PDSM Junction and Storage Temperature Range A -13 PD TA=25°C V -66 IDSM TA=70°C ±25 -20 IDM TA=25°C Units V -24 ID TC=100°C Maximum -30 Typ 24 47 4.2 www.aosmd.com Max 30 60 5.2 °C Units °C/W °C/W °C/W Page 1 of 6 AONR21321 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=-250µA -1 TJ=55°C VGS=-10V, ID=-12A ±100 nA -1.8 -2.3 V 13.5 16.5 19.5 23.5 29.5 RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A 23 gFS Forward Transconductance VDS=-5V, ID=-12A 25 VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz µA -5 -1.3 Units V VDS=-30V, VGS=0V IDSS Max -0.72 mΩ mΩ S -1 V -24 A 1180 pF 185 pF 155 pF 5 10 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 21 34 nC Qg(4.5V) Total Gate Charge 11 18 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=-12A, di/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=-12A, di/dt=500A/µs 15 VGS=-10V, VDS=-15V, ID=-12A nC 6 nC Gate Drain Charge 3 nC Turn-On DelayTime 10.5 ns VGS=-10V, VDS=-15V, RL=1.3Ω, RGEN=3Ω Turn-Off Fall Time 8.5 ns 30 ns 11.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.2°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2017 www.aosmd.com Page 4 of 6 AONR21321 30 30 24 24 Current rating -ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 18 12 6 18 12 0 6 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2017 www.aosmd.com Page 5 of 6 AONR21321 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: November 2017 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6