AONR36326C

AONR36326C 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 30V 12A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 15.9mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I DFN 3x3 EP Bottom View Top View D Top View Pin 1 S S S 1 8 D 2 7 3 6 D D G 4 5 D G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AONR36326C DFN 3X3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy Power Dissipation L=0.05mH TC=25°C B C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.2: April 2021 IAS 20 A EAS 10 mJ 20.5 Steady-State Steady-State RqJA RqJC www.aosmd.com W 8 3.1 W 2 TJ, TSTG Symbol t ≤ 10s A 11 PDSM TA=70°C A 12 PD TC=100°C V 48 IDSM TA=70°C ±20 12 IDM TA=25°C Continuous Drain CurrentG Units V 12 ID TC=100°C Maximum 30 -55 to 150 Typ 30 60 5 °C Max 40 70 6 Units °C/W °C/W °C/W Page 1 of 6 AONR36326C 0 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 5 1.3 VGS=10V, ID=12A nA 1.8 2.3 V 8 9.8 11 13.5 15.9 Static Drain-Source On-Resistance VGS=4.5V, ID=10A 13 gFS Forward Transconductance VDS=5V, ID=12A 45 VSD Diode Forward Voltage IS=1A, VGS=0V 0.73 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz μA ±100 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Max mΩ mΩ S 1 V 12 A 540 pF 230 pF 30 pF 2 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9 15 nC Qg(4.5V) Total Gate Charge 4.3 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr f=1MHz VGS=10V, VDS=15V, ID=12A 1 2.2 nC 1.7 nC 4 ns 3.5 ns 18 ns 3 ns IF=12A, di/dt=500A/ms 9.7 Body Diode Reverse Recovery Charge IF=12A, di/dt=500A/ms 11.5 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1.25W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.1.2: April 2021 www.aosmd.com Page 2 of 6 AONR36326C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V 4.5V VDS=5V 4V 6V 40 40 30 ID (A) ID (A) 30 3.5V 20 20 125°C 10 10 25°C VGS=3V 0 0 0 1 2 3 4 0 5 1 16 4 5 1.6 Normalized On-Resistance 14 RDS(ON) (mW) 3 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 12 VGS=4.5V 10 8 VGS=10V 6 VGS=10V ID=12A 1.4 1.2 1 VGS=4.5V ID=12A 0.8 4 0 3 6 9 12 0 15 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 ID=12A 1 20 125°C 0.1 125°C 15 IS (A) RDS(ON) (mW) 2 0.01 25°C 10 0.001 25°C 5 0.0001 1E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.2: April 2021 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 0 AONR36326C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS=15V ID=12A Ciss 600 Capacitance (pF) VGS (Volts) 8 6 4 400 Coss 200 2 Crss 0 0 0 2 4 6 8 0 10 10ms RDS(ON) limited 25 30 150 1.0 DC 1ms 10ms Power (W) ID (Amps) 20 TJ(Max)=150°C TC=25°C 10ms 100ms 0.0 0.01 15 200 100.0 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 5 TJ(Max)=150°C TC=25°C 100 50 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=6°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.2: April 2021 www.aosmd.com Page 4 of 6 0 AONR36326C 30 15 25 12 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 15 10 5 9 6 3 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) TCASE (°C) Figure 12: Power De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=70°C/W 0.1 PDM Single Pulse 0.01 0.001 0.0001 Ton 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.2: April 2021 www.aosmd.com Page 5 of 6 0 AONR36326C Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.2: April 2021 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6 0