AONS32100

AONS32100 25V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 25V 400A RDS(ON) (at VGS=10V) < 0.73mΩ RDS(ON) (at VGS=4.5V) < 1.08mΩ 100% UIS Tested 100% Rg Tested • High performance ORing, Efuse • Ultra high current battery charge/discharge DFN5X6 Top View D Bottom View Top View S S S 1 8 D 2 7 3 6 D D G 4 5 D G PIN1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AONS32100 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C G Continuous Drain Current C Pulsed Drain Current (≤10μS) TA=25°C Continuous Drain Avalanche Current Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.3.0: May 2019 IAS 80 A EAS 320 mJ 400 Steady-State Steady-State W 160 6.2 RqJA RqJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s A 60 PDSM TA=70°C A 73 PD TA=25°C A V 1500 IDSM C ±20 370 IDM TA=70°C Current Units V 400 ID TC=100°C Maximum 25 -55 to 150 Typ 15 40 0.26 °C Max 20 50 0.31 Units °C/W °C/W °C/W Page 1 of 6 AONS32100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ 25 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 5 0.6 VGS=10V, ID=20A nA 1.1 1.6 V 0.6 0.73 0.9 1.1 0.85 1.08 Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 85 VSD Diode Forward Voltage IS=1A, VGS=0V 0.6 IS Maximum Body-Diode Continuous Current VGS=4.5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=12.5V, f=1MHz 0.7 mΩ mΩ S 1 V 200 A 15200 pF 2000 pF 1400 f=1MHz μA ±100 RDS(ON) TJ=125°C Units V VDS=25V, VGS=0V IDSS Max 1.4 pF 2.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 240 nC Qg(4.5V) Total Gate Charge 115 nC 27 nC 35 nC 15 ns 20 ns 160 ns 50 ns ns nC VGS=10V, VDS=12.5V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 25 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 70 VGS=10V, VDS=12.5V, RL=0.625W, RGEN=3W A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using