AONS36316

AONS36316 30V N-Channel MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS 30V ID (at VGS=10V) 32A RDS(ON) (at VGS=10V) < 4.1mΩ RDS(ON) (at VGS=4.5V) < 4.9mΩ Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I DFN5X6 Top View D Bottom View Top View S S S 1 8 D 2 7 3 6 D D G 4 5 D G PIN1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AONS36316 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.01mH TC=25°C Power Dissipation B TC=100°C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: September 2018 IAS 36 A EAS 6 mJ 26 Steady-State Steady-State RqJA RqJC www.aosmd.com W 10 5 W 3.2 TJ, TSTG Symbol t ≤ 10s A 22 PDSM TA=70°C A 28 PD TA=25°C Power Dissipation A V 128 IDSM TA=70°C ±12 32 IDM TA=25°C Units V 32 ID TC=100°C Maximum 30 -55 to 150 Typ 20 45 4 °C Max 25 55 4.8 Units °C/W °C/W °C/W Page 1 of 6 AONS36316 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 5 1.1 VGS=10V, ID=20A nA 1.5 1.9 V 3.4 4.1 4.7 5.7 4.9 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 3.9 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz μA ±100 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Max mΩ mΩ S 1 V 30 A 2005 pF 430 pF 50 pF 2.2 3.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 30 42 nC Qg(4.5V) Total Gate Charge 13.5 19 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr f=1MHz VGS=10V, VDS=15V, ID=20A 1.1 5.5 nC 3.5 nC 8 ns 3 ns 34 ns 5.5 ns IF=20A, di/dt=500A/ms 12 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 21 ns nC VGS=10V, VDS=15V, RL=0.75W, RGEN=3W A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn -on/turn-off, please consult AOS FAE for proper product selection . APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: September 2018 www.aosmd.com Page 2 of 6 AONS36316 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3V VDS=5V 80 80 3.5V 4.5V 60 10V ID (A) ID (A) 60 2.5V 40 125°C 40 25°C 20 20 VGS=2V 0 0 0 1 2 3 4 0 5 1 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 6 Normalized On-Resistance 1.6 5 RDS(ON) (mW) 2 VGS=4.5V 4 3 VGS=10V 2 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 1 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 125°C 6 IS (A) RDS(ON) (mW) 8 1.0E-02 4 25°C 1.0E-03 25°C 2 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: September 2018 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AONS36316 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=15V ID=20A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 1500 1000 Coss 2 500 Crss 0 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 TJ(Max)=150°C TC=25°C 180 10ms 100.0 160 RDS(ON) limited 140 10ms 10.0 100ms DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 25 120 100 80 60 40 20 0.0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=4.8°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: September 2018 www.aosmd.com Page 4 of 6 AONS36316 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 25 Power Dissipation (W) 30 Current rating ID (A) 20 15 10 5 0 20 10 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: September 2018 www.aosmd.com Page 5 of 6 AONS36316 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: September 2018 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6