AONS62922

AONS62922 120V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic level Gate Drive • Optimized for synchronous Rectifier • RoHS and Halogen-Free Compliant 120V 85A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 7mΩ RDS(ON) (at VGS=4.5V) < 9mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification for Flyback Converters • Charger for Mobile Devices • USB-PD Adaptors D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AONS62922 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: July 2017 22 60 A EAS 180 mJ 215 Steady-State Steady-State W 86 7.3 RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range A 17.5 PD TA=25°C V 250 IDSM TA=70°C ±20 75 IDM TA=25°C Units V 85 ID TC=100°C Maximum 120 -55 to 150 Typ 14 40 0.43 www.aosmd.com Max 17 50 0.58 °C Units °C/W °C/W °C/W Page 1 of 6 AONS62922 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 120 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 1.85 2.4 V 5.8 7.0 11 13.3 9.0 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 7.1 gFS Forward Transconductance VDS=5V, ID=20A 83 VSD Diode Forward Voltage IS=1A, VGS=0V 0.67 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mΩ 1 V 85 A pF 360 pF 9 pF 1.1 1.6 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 46 65 nC Qg(4.5V) Total Gate Charge 20 30 nC Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 355 Body Diode Reverse Recovery Time VGS=10V, VDS=60V, ID=20A 0.5 mΩ S 3295 VGS=0V, VDS=60V, f=1MHz f=1MHz µA 5 1.4 Units V VDS=120V, VGS=0V IDSS Max 10 nC 5.5 nC VGS=0V, VDS=60V 85 nC 10 ns VGS=10V, VDS=60V, RL=3Ω, RGEN=3Ω 3.5 ns 34 ns 5.5 ns 43 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.58°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: July 2017 www.aosmd.com Page 4 of 6 AONS62922 250 100 200 80 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 100 50 60 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 4 TA=25°C 3.5 1000 3 2.5 Power (W) Eoss(uJ) 125 100 2 1.5 10 1 0.5 0 0 20 40 60 80 100 120 140 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZθJA Normalized Transient Thermal Resistance 0.001 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: July 2017 www.aosmd.com Page 5 of 6 AONS62922 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: July 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6