AOP605_06

AOS Semiconductor Product Reliability Report AOP605/AOP605L, Plastic Encapsulated Device rev B ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Apr 4, 2006 1 This AOS product reliability report summarizes the qualification result for AOP605. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOP605passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AOP605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical. Absolute Maximum Ratings TA=25°C unless otherwise noted Units Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C IDM PD TJ, TSTG TA=25°C TA=70°C VDS VGS ID 30 ±20 7.5 6 30 2.5 1.6 -55 to 150 -30 ±20 -6.6 -5.3 -30 2.5 1.6 -55 to 150 A W °C V V Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics : n-channel, Schottky and p-channel Parameter Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead t ≤ 10s SteadyState SteadyState t ≤ 10s SteadyState SteadyState Symbol RθJA Device n-ch n-ch RθJL RθJA n-ch p-ch p-ch RθJL p-ch Typ 40 67 33 38 66 30 Max 50 80 40 50 80 40 °C/W Units 2 II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Mold Material Filler % (Spherical/Flake) Flammability Rating Backside Metallization Moisture Level AOP605 AOP605L (Green Compound) Standard sub-micron Standard sub-micron low voltage complementary process 8 lead PDIP 8 lead PDIP Copper with Solder Plate Copper with Solder Plate Silver epoxy Silver epoxy 2 mils Au wire 2 mils Au wire Epoxy resin with silica filler Epoxy resin with silica filler 100/0 90/10 UL-94 V-0 UL-94 V-0 Ti / Ni / Ag Ti / Ni / Ag Up to Level 1 * Up to Level 1* Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AOP605 (Standard) & AOP605L (Green) Test Item Solder Reflow Precondition Test Condition Standard: 1hr PCT+3 cycle reflow@250°c Green: 168hr 85°c /85%RH +3 cycle reflow@250°c Temp = 150°c, Vgs=100% of Vgsmax Time Point 0hr Lot Attribution Standard: 11 lots Green: 4 lots Total Sample size 2365 pcs Number of Failures 0 HTGB 168 / 500 hrs 1000 hrs 6 lots 492 pcs 77+5 pcs / lot 0 (Note A*) HTRB Temp = 150°c, Vds=80% of Vdsmax 168 / 500 hrs 1000 hrs 6 lots 492 pcs 77+5 pcs / lot 825 pcs 50+5 pcs / lot 0 (Note A*) Standard: 11 lots Green: 4 lots (Note B**) Standard: 11 lots Green: 3 lots (Note B**) Standard: 11 lots Green: 3 lots (Note B**) HAST 130 +/- 2°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°c, 15+/-1 PSIG, RH=100% -65°c to 150 °c, air to air 100 hrs 0 Pressure Pot 96 hrs 770 pcs 50+5 pcs / lot 0 Temperature Cycle 250 / 500 cycles 770 pcs 50+5 pcs / lot 0 DPA Internal Vision Cross-section X-ray NA 5 5 5 5 5 5 5 5 0 CSAM NA 0 3 Bond Integrity Room Temp 150°c bake 150°c bake 230°c 0hr 250hr 500hr 5 sec 40 40 40 15 40 wires 40 wires 40 wires 15 leads 0 Solderability 0 Note A: The HTGB and HTRB reliability data presents total of available AOP605and AOP605L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AOP605and AOP605L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 10 MTTF = 11415 years In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOP605). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (164) (168) (258) + 2 (2×164) (500) (258) + 2 (164) (1000) (258)] = 10 MTTF = 109 / FIT = 1.0 x 108hrs =11415 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C Af 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 4 V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D 5