AOP611L

AOP611 Complementary Enhancement Mode Field Effect Transistor General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a Green Product ordering option. AOP611 and AOP611L are electrically identical. Features n-channel VDS (V) = 40V ID = 6.5A (VGS=10V) RDS(ON) < 35mΩ (VGS=10V) < 47mΩ (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 80mΩ (VGS = -4.5V) ESD rating: 3000V (HBM) UIS TESTED! Rg,Ciss,Coss,Crss Tested D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 PDIP-8 n-channel p-channel Max p-channel -40 ±20 -5.5 -4.4 -25 2.5 1.6 17 43 -55 to 150 A Units V V Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 Continuous Drain TA=25°C 6.5 Current A TA=70°C ID 5.3 B Pulsed Drain Current IDM 30 TA=25°C TA=70°C Power Dissipation Avalanche Current B B Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range PD IAR EAR TJ, TSTG 2.5 1.6 13 25 -55 to 150 W A mJ °C Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-LeadC Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 37 74 28 35 73 32 Max 50 90 40 50 90 40 Units °C/W °C/W °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOP611 N Channel Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions ID=250µA, VGS=0V VDS=32V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=6.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=6.5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 30 28.5 40 38.5 18 0.76 1 3.5 506 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 106 38 2.6 8.4 VGS=10V, VDS=20V, ID=6.7A 4.1 1.6 2.6 4.8 VGS=10V, VDS=20V, RL=3Ω, RGEN=3Ω IF=6.5A, dI/dt=100A/µs 2 17 2.1 17.5 11.1 3.9 35 48 47 2.2 Min 40 1 5 1 3 Typ Max Units V µA mA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using