AOP806

AOP806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP806 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V ID = 3.4A (VGS = 10V) RDS(ON) < 132mΩ (VGS = 10V) RDS(ON) < 168mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 PDIP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current B B Symbol VDS VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG Maximum 10 Sec Steady State 75 ±25 3.4 2.7 15 2.5 1.6 10 15 -55 to 150 1.6 1 2.7 2.1 Units V V A W A mJ °C Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 40 67 33 Max 50 80 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOP806 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=75V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=3.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 15 108 162 128 10 0.77 1 3 290 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 24 2.4 5.1 VGS=10V, VDS=30V, ID=3.4A 2.3 1.0 1.2 4 VGS=10V, VDS=30V, RL=8.8Ω, RGEN=3Ω IF=3.4A, dI/dt=100A/µs 3.4 14.4 2.4 30.2 21.5 45 3.5 7 380 132 198 168 2.3 Min 75 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using