AOSD21311C

AOSD21311C 30V Dual P-Channel MOSFET General Description Product Summary • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=-10V) -30V -5A RDS(ON) (at VGS=-10V) < 42mΩ RDS(ON) (at VGS=-4.5V) < 64mΩ Typical ESD protection HBM Class 1C VDS Applications 100% UIS Tested 100% Rg Tested • Notebook AC-in Load Switch • Battery Protection Charge/Discharge SOIC-8 Top View D Bottom View D Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G G S Pin1 S Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AOSD21311C SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy Power Dissipation B L=0.1mH TA=25°C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: May 2019 Steady-State Steady-State V A IDM -20 IAS 13 A EAS 8 mJ 1.7 W 1.1 TJ, TSTG Symbol t ≤ 10s ±20 -3.9 PD TA=70°C Units V -5 ID TA=70°C Maximum -30 RqJA RqJL -55 to 150 Typ 52 80 35 www.aosmd.com °C Max 70 100 45 Units °C/W °C/W °C/W Page 1 of 5 AOSD21311C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -30 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250mA -1 TJ=55°C ±10 μA -1.7 -2.2 V 35 42 50 60 64 mΩ S -1 V -2 A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-4.1A 51 gFS Forward Transconductance VDS=-5V, ID=-5A 14 VSD Diode Forward Voltage IS=-1A, VGS=0V -0.8 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=-10V, VDS=-15V, ID=-5A μA -5 -1.2 VGS=-10V, ID=-5A Coss Units V VDS=-30V, VGS=0V IDSS Max mΩ 720 pF 80 pF 70 pF 15 25 Ω 12.5 23 nC 6 12 nC 1.6 nC Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 8.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 5 ns 39 ns 14.5 ns IF=-5A, di/dt=500A/ms 10 Body Diode Reverse Recovery Charge IF=-5A, di/dt=500A/ms 13 ns nC Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=3W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=100°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: May 2019 www.aosmd.com Page 4 of 5 AOSD21311C Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC BVDSS Vdd + Rg Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: May 2019 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5