AOSD26313C

AOSD26313C 30V Complementary MOSFET General Description Product Summary • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant P-Channel VDS= -30V N-Channel VDS= 30V ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) RDS(ON) RDS(ON) < 32mΩ (VGS=-10V) < 55mΩ (VGS=-4.5V) < 20mΩ (VGS=10V) < 26mΩ (VGS=4.5V) ESD protection Applications 100% UIS Tested 100% Rg Tested • Notebook AC-in Load Switch • Battery Protection Charge/Discharge 100% UIS Tested 100% Rg Tested SO-8 Top View D1 Bottom View D2 Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G1 G2 S1 Pin1 S2 Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AOSD26313C SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current Avalanche Current C C Power Dissipation B Units V ±20 ±20 V L=0.1mH TA=25°C C Junction and Storage Temperature Range Rev.1.1: September 2019 7 -4.4 5.4 IDM -23 34 IAS 20 15 A mJ EAS PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead -5.7 ID TA=70°C Avalanche energy Max Q2 30 VGS TA=25°C Pulsed Drain Current Max Q1 -30 t ≤ 10s Steady-State Steady-State 20 11 1.7 1.7 1.1 1.1 A W TJ, TSTG -55 to 150 °C Symbol Typ Q1 Max Q1 Typ Q2 Max Q2 52 70 52 70 80 100 80 100 35 45 35 45 Units °C/W °C/W °C/W RqJA RqJL www.aosmd.com Page 1 of 9 AOSD26313C P-CH Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current • Latest advanced Gate-Body leakage current VGS(th) Gate Threshold Voltage Conditions Min ID=-250mA, VGS=0V -30 ±10 μA -1.7 -2.2 V 25 32 32 41 VGS=-4.5V, ID=-4.4A 35 55 17 VDS=VGS, ID=-250mA -1.2 TJ=125°C Forward Transconductance VDS=-5V, ID=-5.7A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA -5 VDS=0V, VGS=±20V gFS Output Capacitance Units -1 TJ=55°C Static Drain-Source On-Resistance Coss Max V VDS=-30V, VGS=0V VGS=-10V, ID=-5.7A RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz -0.8 mΩ mΩ S -1 V -2 A 1100 pF 120 pF 105 pF 11 18 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 33 nC Qg(4.5V) Total Gate Charge 11 18 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr f=1MHz VGS=-10V, VDS=-15V, ID=-5.7A VGS=-10V, VDS=-15V, RL=2.63W, RGEN=3W 2.5 nC 6.5 nC 12 ns 9 ns 55 ns 19 ns IF=-5.7A, di/dt=500A/ms 12 Body Diode Reverse Recovery Charge IF=-5.7A, di/dt=500A/ms 17 ns nC Body Diode Reverse Recovery Time A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead R qJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=80°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.1: September 2019 www.aosmd.com Page 4 of 9 AOSD26313C Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC BVDSS Vdd + Rg Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.1: September 2019 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 9 AOSD26313C N-CH Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA V TJ=55°C μA 1.8 2.3 V 16 20 24 30 VGS=4.5V, ID=6.3A 20 26 1.3 TJ=125°C gFS Forward Transconductance VDS=5V, ID=7A 33 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA 5 ±10 Static Drain-Source On-Resistance Output Capacitance Units 1 VGS=10V, ID=7A Coss Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 1 V 2 A 600 pF 70 pF 60 pF 2.4 3.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 20 nC Qg(4.5V) Total Gate Charge 6 12 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=15V, ID=7A 1.2 2.2 nC Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 4 ns 20 ns 4 ns IF=7A, di/dt=500A/ms 5 Body Diode Reverse Recovery Charge IF=7A, di/dt=500A/ms 6 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=2.143W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead R qJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=100°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.1: September 2019 www.aosmd.com Page 8 of 9 AOSD26313C Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.1: September 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 9 of 9