AOSP21307

AOSP21307 30V P-Channel MOSFET General Description Product Summary • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=-10V) VDS Applications -30V -14A RDS(ON) (at VGS=-10V) < 11.5mΩ RDS(ON) (at VGS=-4.5V) < 18.5mΩ 100% UIS Tested 100% Rg Tested • Notebook AC-in Load Switch • Battery Protection Charge/Discharge SOIC-8 Top View D D D Top View Bottom View D D 1 8 2 7 3 6 4 5 G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AOSP21307 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Avalanche energy L=0.1mH TA=25°C Power Dissipation B TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: October 2017 Steady-State Steady-State A IAS 33 A EAS 54 mJ 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s V -56 PD Junction and Storage Temperature Range ±25 -11 IDM Avalanche Current C Units V -14 ID TA=70°C Maximum -30 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AOSP21307 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current • Latest advanced Gate-Body leakage current VGS(th) Gate Threshold Voltage Conditions Min ID=-250µA, VGS=0V -30 -1.3 gFS Forward Transconductance VDS=-5V, ID=-14A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=-4.5V, ID=-10A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz µA -5 VDS=0V, VGS=±25V VDS=VGS, ID=-250µA Static Drain-Source On-Resistance Units -1 TJ=55°C RDS(ON) Max V VDS=-30V, VGS=0V VGS=-10V, ID=-14A Coss Typ ±100 nA -1.8 -2.3 V 9.5 11.5 13.2 15.8 14.7 18.5 mΩ mΩ 42 -0.7 S -1 V -4 A 1995 pF 300 pF 260 pF 4.5 9 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 35 50 nC Qg(4.5V) Total Gate Charge 17 25 Qgs Gate Source Charge Qgd tD(on) VGS=-10V, VDS=-15V, ID=-14A nC 5.7 nC Gate Drain Charge 8.8 nC Turn-On DelayTime 11 ns VGS=-10V, VDS=-15V, RL=1.05Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=-14A, di/dt=500A/µs Body Diode Reverse Recovery Time IF=-14A, di/dt=500A/µs 7.5 ns 43.5 ns 17.5 ns 13.3 ns nC 20 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2017 www.aosmd.com Page 4 of 5 AOSP21307 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & W aveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0: October 2017 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5