AOSP21357

AOSP21357 30V P-Channel MOSFET General Description Product Summary • Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Free Compliant ID (at VGS=-10V) -30V -16A RDS(ON) (at VGS=-10V) < 8.5mΩ RDS(ON) (at VGS=-4.5V) < 13mΩ VDS Applications 100% UIS Tested 100% Rg Tested • Notebook AC-in load switch • Battery protection charge/discharge SO-8 Top View D Top View Bottom View D D D G D S S S 1 8 D 2 7 3 6 D D G 4 5 D G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AOSP21357 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TA=25°C Power Dissipation B TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.3.0: February 2020 Steady-State Steady-State V A IDM -64 IAS 39 A EAS 76 mJ 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s ±25 -12.5 PD Junction and Storage Temperature Range Units V -16 ID TA=70°C Maximum -30 RqJA RqJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AOSP21357 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current • Latest advanced Gate-Body leakage current VGS(th) Gate Threshold Voltage Conditions Min ID=-250mA, VGS=0V -30 VDS=VGS, ID=-250mA -1.3 gFS Forward Transconductance VDS=-5V, ID=-16A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=-4.5V, ID=-12A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz μA -5 VDS=0V, VGS=±25V Static Drain-Source On-Resistance Units -1 TJ=55°C RDS(ON) Max V VDS=-30V, VGS=0V VGS=-10V, ID=-16A Coss Typ ±100 nA -1.75 -2.3 V 7 8.5 9.6 11.6 10.5 13 mΩ 50 -0.7 mΩ S -1 V -4 A 2830 pF 430 pF 365 pF 14 28 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 50 70 nC Qg(4.5V) Total Gate Charge 25 35 nC Qgs Gate Source Charge Qgd f=1MHz VGS=-10V, VDS=-15V, ID=-16A 9 nC Gate Drain Charge 12 nC tD(on) Turn-On DelayTime 12 ns tr Turn-On Rise Time 12.5 ns tD(off) Turn-Off DelayTime 135 ns tf trr Turn-Off Fall Time 63 ns IF=-16A, di/dt=500A/ms 32 Qrr Body Diode Reverse Recovery Charge IF=-16A, di/dt=500A/ms 62 ns nC Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=0.95W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-06 100 0.0001 0.01 1 100 10000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=75°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.3.0: February 2020 www.aosmd.com Page 4 of 5 AOSP21357 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC BVDSS Vdd + Rg Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.3.0: February 2020 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5