AOSS62934

AOSS62934 100V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant ID (at VGS=10V) 100V 2A RDS(ON) (at VGS=10V) < 140mΩ RDS(ON) (at VGS=4.5V) < 180mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial SOT23 Top View Bottom View D D D G S G S S G Orderable Part Number Package Type Form Minimum Order Quantity AOSS62934 SOT23 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: September 2018 Steady-State Steady-State RqJA RqJL www.aosmd.com A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V 8 PD TA=70°C ±20 1.5 IDM TA=25°C Power Dissipation B Units V 2.0 ID TA=70°C Maximum 100 -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AOSS62934 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C ±100 nA 2.2 2.7 V 117 140 210 252 140 180 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=2A 5 VSD Diode Forward Voltage IS=1A, VGS=0V 0.8 IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=1A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz μA 5 1.7 VGS=10V, ID=2A Coss Units V VDS=100V, VGS=0V IDSS Max mΩ mΩ S 1.1 V 2 A 250 pF 19 pF 2.5 pF 10.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 3.8 nC Qg(4.5V) Total Gate Charge 1.8 nC Qgs Gate Source Charge 0.8 nC Qgd Gate Drain Charge 0.8 nC Qoss Output Charge 3 tD(on) Turn-On DelayTime 5 nC ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr f=1MHz VGS=10V, VDS=50V, ID=2A VGS=0V, VDS=50V 3 ns 19 ns 3 ns IF=2A, di/dt=500A/ms 12 Body Diode Reverse Recovery Charge IF=2A, di/dt=500A/ms 27 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=25W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V 10 ZqJA Normalized Transient Thermal Resistance 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 0.01 RqJA=125°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: September 2018 www.aosmd.com Page 4 of 5 AOSS62934 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit &&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: September 2018 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5