AOT10B65M2

AOT10B65M2 650V, 10A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 10A VCE(sat) (TJ=25°C) 1.6V Applications • Motor Drives • Sewing Machines • Servo and General Purpose Inverters • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications C TO-220 G C E G E AOT10B65M2 Orderable Part Number Package Type AOT10B65M2 TO220 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Form Minimum Order Quantity Tube 1000 AOT10B65M2 650 Units V ±30 V Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 30 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 30 A Continuous Diode Forward Current TC=25°C TC=100°C IF 20 10 20 10 A A Diode Pulsed Current, Limited by TJmax I FM 30 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 150 75 -55 to 175 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 TL Thermal Characteristics AOT10B65M2 Parameter Symbol R θ JA 65 Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case 1 R θ JC Maximum Diode Junction-to-Case R θ JC 1.9 1) Allowed number of short circuits: 1s. Rev.1.0: April 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=10A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=10A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.6 2 TJ=125°C - 1.86 - TJ=175°C - 2.02 - TJ=25°C - 1.6 2 TJ=125°C - 1.63 - TJ=175°C - 1.56 - - 5.1 - V V V TJ=25°C - - 10 TJ=125°C - - 500 TJ=175°C - - 5000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=10A - 9 - S - 647 - pF - 82 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 25 - pF Qg Total Gate Charge - 24 - nC Q ge Gate to Emitter Charge - 5.5 - nC Q gc Gate to Collector Charge - 12 - nC I C(SC) Short circuit collector current - 70 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 5.8 - Ω VGE=15V, VCC=520V, IC=10A VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C t D(on) Turn-On DelayTime - 12 - ns tr Turn-On Rise Time - 16 - ns t D(off) Turn-Off Delay Time - 91 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 0.18 - mJ E off Turn-Off Energy - 0.13 - mJ E total t rr Total Switching Energy - 0.31 - mJ Diode Reverse Recovery Time - 262 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=10A, RG=30Ω - 0.45 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 4 - A t D(on) Turn-On DelayTime - 10 - ns tr Turn-On Rise Time - 17 - ns t D(off) Turn-Off Delay Time - 111 - ns tf Turn-Off Fall Time - 26 - ns E on Turn-On Energy - 0.2 - mJ E off Turn-Off Energy - 0.23 - mJ E total t rr Total Switching Energy - 0.43 - mJ Diode Reverse Recovery Time - 260 - Q rr Diode Reverse Recovery Charge - 0.9 - ns µC I rm Diode Peak Reverse Recovery Current - 5.6 - A TJ=25°C IF=10A, di/dt=200A/µs, VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=10A, RG=30Ω TJ=175°C IF=10A, di/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 20V 17V 40 20V 15V 17V 40 15V IC (A) IC (A) 13V 30 11V 20 30 13V 20 11V 9V 9V 10 10 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 30 30 VCE=20V 25 25 -40°C 20 175°C IF (A) IC (A) 20 15 10 25°C 15 175°C 10 25°C -40°C 5 5 0 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 VF (V) Figure 4: Diode Characteristic 5 3 4 2.5 20A IC=20A 3 2 VSD (V) VCE(sat) (V) VGE (V) Figure 3: Transfer Characteristic IC=10A 2 10A 1.5 5A 1 1 IF=1A IC=5A 0.5 0 0 0 25 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: April 2015 50 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=10A 12 Cies Capacitance (pF) VGE (V) 1000 9 6 Coes 100 Cres 10 3 0 1 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 200 Power Disspation (W) 160 120 80 40 0 25 50 75 100 125 150 175 30 1E-03 25 1E-04 20 1E-05 ICE(S) (A) Current rating IC (A) TCASE (°C) Figure 10: Power Disspation as a Function of Case 15 VCE=650V 1E-06 VCE=520V 10 1E-07 5 1E-08 0 1E-09 25 50 75 100 125 150 175 TCASE (°C) Figure 11: Current De-rating Rev.1.0: April 2015 0 25 50 75 100 125 150 175 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 10 1 100 10 1 5 8 11 14 17 20 0 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=30Ω) 10000 150 200 250 300 7 6 5 VGE(TH) (V) Switching Time (ns) 100 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=10A) Td(off) Tf Td(on) Tr 1000 50 100 4 3 10 2 1 1 25 Rev.1.0: April 2015 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=10A, Rg=30Ω) 175 www.aosmd.com 0 25 50 75 100 125 150 175 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.5 1.5 Eoff Eoff 1.2 Switching Energy (mJ) 1.2 SwitchIng Energy (mJ) Eon Eon Etotal 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0 5 8 11 14 17 20 0 IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=30Ω) 50 150 200 250 300 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=10A) 0.6 0.6 Eoff Eoff Eon 0.5 Eon 0.5 Etotal Switching Energy (mJ) Switching Energy (mJ) 100 0.4 0.3 0.2 0.1 Etotal 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=10A, Rg=30Ω) Rev.1.0: April 2015 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=10A, Rg=30Ω) Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Qrr (nC) 800 600 30 300 24 240 18 25°C Qrr 400 12 14 20 25°C 180 15 10 60 5 S 175°C 25°C 11 Trr 120 6 8 25 25°C 200 5 175°C Irm 175°C 0 30 S 175°C 360 Irm (A) 1000 36 Trr (ns) 1200 0 17 0 20 0 5 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 1200 1000 8 11 14 17 20 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 36 360 30 300 24 240 30 25 175°C 600 18 25°C 400 175°C Irm 200 20 25°C Trr 180 12 120 6 60 0 0 15 175°C 0 200 300 500 600 700 800 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=10A) Rev.1.0: April 2015 400 www.aosmd.com 10 5 S 25°C 25°C S Qrr Trr (ns) Qrr (nC) 800 Irm (A) 175°C 0 200 300 400 500 600 700 800 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=10A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.9°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: April 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: April 2015 www.aosmd.com Page 9 of 9