AOT10N65

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS TO-220 G D Top View ID (at VGS=10V) 750V@150℃ 10A RDS(ON) (at VGS=10V) < 1W 100% UIS Tested 100% Rg Tested TO-220F D G G D S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D ID Units V V 10 10* 6.2 6.2* A IDM 36 IAR 3.4 A EAR 173 mJ EAS dv/dt 347 5 mJ V/ns W PD 250 50 2 0.4 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RqJA RqCS AOT10N65 65 AOTF10N65 65 Units °C/W 0.5 0.5 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev4.0: January 2021 AOTF10N65 www.aosmd.com Page 1 of 6 AOT10N65/AOTF10N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250mA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ID=250μA, VGS=0V, TJ=150°C 750 ID=250μA, VGS=0V VDS=650V, VGS=0V 0.75 V V/ oC 1 VDS=520V, TJ=125°C 10 ±100 mA 4 4.5 nA V VGS=10V, ID=5A 0.77 1 W VDS=40V, ID=5A 13 3 S 1 V Maximum Body-Diode Continuous Current 10 A Maximum Body-Diode Pulsed Current 36 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=520V, ID=10A 0.73 1095 1369 1645 pF 95 118 145 pF 8 10 12 pF 1.7 3.5 5.5 W 22 27.7 33 nC 6 7.4 9 nC 9 11.3 14 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A,dI/dt=100A/ms,VDS=100V 255 320 385 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/ms,VDS=100V 4.8 6 7.2 Body Diode Reverse Recovery Time VGS=10V, VDS=325V, ID=10A, RG=25W 30 ns 61 ns 74 ns 53 ns ns μC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using