AOT10T60P

AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 40A RDS(ON),max < 0.7Ω Applications Qg,typ 26nC Eoss @ 400V 3.5µJ 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Top View D TO-263 D2PAK TO-220F TO-220 D D G D AOT10T60P S D G S S G G S AOB10T60P AOTF10T60P Orderable Part Number Package Type Form Minimum Order Quantity AOT10T60PL AOB10T60PL AOTF10T60P AOTF10T60PL TO-220 Green TO-263 Green TO-220F Pb Free TO-220F Green Tube Tape & Reel Tube Tube 1000 800 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Avalanche Current C AOT(B)10T60P AOTF10T60P 600 C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J TC=25°C B Power Dissipation Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient ±30 ID 10* 10* 6.6 6.6* 6.6* 40 Units V V 10 IDM A IAR 10 A EAR 50 mJ EAS 480 50 15 43 0.3 -55 to 150 mJ dv/dt 208 1.7 PD TJ, TSTG TL V/ns 33 0.26 300 Symbol RθJA AOT(B)10T60P AOTF10T60P RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0: March 2014 AOTF10T60PL W W/°C °C °C AOTF10T60PL Units 65 65 65 °C/W 0.5 0.6 -2.9 -3.8 °C/W °C/W www.aosmd.com Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V 0.56 VDS=600V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) VGS=10V, ID=5A gFS Forward Transconductance VDS=40V, ID=5A 8.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 IS ISM ±100 nA 5 V 0.58 0.7 Ω 1 V Maximum Body-Diode Continuous Current 10 A Maximum Body-Diode Pulsed Current C 40 A Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge S 1595 pF 56 pF 42 pF 74 pF VGS=0V, VDS=100V, f=1MHz 11 pF f=1MHz 1.7 Ω VGS=10V, VDS=480V, ID=10A 8.1 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 µA 4.3 DYNAMIC PARAMETERS Input Capacitance Ciss Co(tr) V/ oC VDS=480V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V 26 40 nC Qgd Gate Drain Charge 8.2 nC tD(on) Turn-On DelayTime 42 ns tr Turn-On Rise Time 54 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=10A, RG=25Ω 52 ns tf trr 24 ns Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V 497 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 7.3 ns µC Turn-Off Fall Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using