AOT11C60

AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description Product Summary The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700 IDM 80A RDS(ON),max < 0.44Ω Qg,typ 30nC Eoss @ 400V 5.1µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11C60L & AOB11C60L & AOTF11C60L Top View TO-220 TO-263 D2PAK TO-220F D D G AOT11C60 D S G AOTF11C60 D G Continuous Drain Current VGS TC=25°C TC=100°C S AOB11C60 Absolute Maximum Ratings TA=25°C unless otherwise noted AOT11C60/AOB11C60 Parameter Symbol Drain-Source Voltage VDS 600 Gate-Source Voltage G S S AOTF11C60 ±30 11 ID Units V V 11* 9 9* A Pulsed Drain Current C IDM 80 Avalanche Current C,J IAR 11 A Repetitive avalanche energy C,J EAR 60 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 750 100 20 mJ dv/dt W 0.4 -55 to 150 W/ oC °C 300 °C 2.2 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.3.0: Auguest 2014 50 278 PD AOT11C60/AOB11C60 65 0.5 0.45 www.aosmd.com V/ns AOTF11C60 65 -2.5 Units °C/W °C/W °C/W Page 1 of 6 AOT11C60/AOB11C60/AOTF11C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.55 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A gFS Forward Transconductance VDS=40V, ID=5.5A 12 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 ±100 3 µA 4 5 nΑ V 0.36 0.44 Ω 1 V S IS Maximum Body-Diode Continuous Current 11 A ISM Maximum Body-Diode Pulsed Current C 80 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H VGS=0V, VDS=100V, f=1MHz 2000 pF 84 pF 60 pF 107 pF VGS=0V, VDS=0 to 480V, f=1MHz Crss Effective output capacitance, time related I Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 2.8 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.5 Ω Co(tr) SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 30 VGS=10V, VDS=480V, ID=11A 42 nC 14 nC 4 nC 50 ns VGS=10V, VDS=300V, ID=11A, RG=25Ω 50 ns 70 ns 32 ns IF=11A,dI/dt=100A/µs,VDS=100V 485 Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 7.2 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using