AOT12N30L

AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 350V@150℃ 11.5A RDS(ON) (at VGS=10V) < 0.42Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT12N30L/AOTF12N30L Top View TO-220 TO-220F G D AOT12N30 D G S G AOTF12N30 D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N30 Drain-Source Voltage VDS 300 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C ID Avalanche Current C IAS Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt Rev 1: Nov 2011 11.5* 7.3 IDM Units V V 11.5 Pulsed Drain Current C Maximum Case-to-sink A Maximum Junction-to-Case AOTF12N30 7.3* A 3.8 A 430 5 132 36 mJ V/ns W 1 0.3 29 PD TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOT12N30 65 AOTF12N30 65 Units °C/W 0.5 0.95 -3.5 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOT12N30/AOTF12N30 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 300 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 350 V ID=250µA, VGS=0V 0.29 V/ oC VDS=300V, VGS=0V 1 VDS=240V, TJ=125°C 10 ±100 3.4 4 4.5 nΑ V 0.42 Ω 1 V 11.5 A 29 A pF RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A 0.31 gFS Forward Transconductance VDS=40V, ID=6A 11 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V S 0.74 500 632 790 55 90 125 pF 3 7 11 pF 1.3 2.7 4.1 Ω 10 12.8 16 VGS=10V, VDS=240V, ID=12A Qgs µA nC 4.4 nC Gate Drain Charge 4.3 nC Turn-On DelayTime 18 ns 31 ns Body Diode Reverse Recovery Time VGS=10V, VDS=150V, ID=12A, RG=25Ω IF=12A,dI/dt=100A/µs,VDS=100V 36 ns 20 ns 130 170 205 1 1.3 1.6 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using