AOT1404L

AOT1404L/AOB1404L 40V N-Channel Rugged Planar MOSFET General Description Product Summary The AOT1404L/AOB1404L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. VDS 40V ID (at VGS=10V) 220A RDS(ON) (at VGS=10V) < 4.2mΩ 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Bottom View Top View D D Bottom View D D D G G D S S D G S Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current ±20 V 157 A 15 IDSM TA=70°C Units V 500 IDM TA=25°C Maximum 40 220 ID TC=100°C S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage G G A 11 Avalanche Current C IAS, IAR 140 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 980 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev1: May 2011 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 208 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 417 PD -55 to 175 Typ 12 48 0.3 www.aosmd.com °C Max 15 60 0.36 Units °C/W °C/W °C/W Page 1 of 6 AOT1404L/AOB1404L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µΑ 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 500 VGS=10V, ID=20A TO220 Static Drain-Source On-Resistance gFS Forward Transconductance VGS=10V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge µA 5 IGSS Units V 1 TJ=55°C RDS(ON) Max 40 VDS=40V, VGS=0V VGS(th) Coss Typ 100 nA 3.1 3.7 V 3.6 4.2 6 7 3.3 55 3.9 mΩ S 0.7 1 V 220 A A mΩ 2840 3568 4300 pF 960 1388 1810 pF 85 151 215 pF 1.5 3.1 4.7 Ω 55 71 86 nC VGS=10V, VDS=20V, ID=20A Qgs Gate Source Charge 15 nC Qgd Gate Drain Charge 23 nC tD(on) Turn-On DelayTime 16 ns tr Turn-On Rise Time 30 ns tD(off) Turn-Off DelayTime 54 ns tf Turn-Off Fall Time 20 ns VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 35 45 55 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 225 287 350 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using