AOT14N50

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 14A RDS(ON) (at VGS=10V) < 0.38W 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G AOT14N50 G D S G AOTF14N50 D S AOB14N50 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT14N50/AOB14N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C S S AOTF14N50 ±30 14 ID V 14* 11 IDM Units V 11* A 56 Avalanche Current C IAR 6 A Repetitive avalanche energy C EAR 540 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 1080 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG PD 50 0.4 TL Symbol RqJA RqCS -55 to 150 W/ oC °C 300 °C AOT14N50/AOB14N50 65 AOTF14N50 65 Units °C/W 0.5 0.45 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev 7.0: January 2021 278 2.2 www.aosmd.com Page 1 of 6 AOT14N50/AOB14N50/AOTF14N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) VDS=5V ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ID=250μA, VGS=0V, TJ=150°C 600 V ID=250μA, VGS=0V 0.5 V/ C o VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 ±100 mA 4.2 4.5 nA V VGS=10V, ID=7A 0.29 0.38 W VDS=40V, ID=7A 20 3.3 S 1 V Maximum Body-Diode Continuous Current 14 A Maximum Body-Diode Pulsed Current 56 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=14A 0.71 1531 1914 2297 pF 153 191 229 pF 11 16 20 pF 1.75 3.5 5.3 W 42.8 51 nC 9.3 11 nC Qgs Gate Source Charge Qgd Gate Drain Charge 20.3 24 nC tD(on) Turn-On DelayTime 44 53 ns tr Turn-On Rise Time 84 101 ns tD(off) Turn-Off DelayTime 92 110 ns tf trr Turn-Off Fall Time 50 60 ns IF=14A,dI/dt=100A/ms,VDS=100V 289 347 Qrr Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/ms,VDS=100V 4.93 6 ns mC Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=14A, RG=25W A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using