AOT190A60L

AOB190A60L/AOT190A60L 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 700V IDM 80A RDS(ON),max < 0.19Ω Qg,typ 34nC Eoss @ 400V 4.3mJ Applications 100% UIS Tested 100% Rg Tested • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Telecom Top View TO-263 D2PAK TO-220 Bottom View Top View D D D D G S S G D Bottom View G D S S D G G S AOT190A60L AOB190A60L Orderable Part Number Package Type Form Minimum Order Quantity AOB190A60L AOT190A60L TO-263 Green TO-220 Green Tape&Reel Tube 800 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C AOB190A60L 600 AOT190A60L Units V VGS ±20 V VGS ±30 V 20 ID A 12 Pulsed Drain Current C IDM Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 12.5 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 410 100 20 208 1.66 -55 to 150 mJ W W/°C °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.2.0: December 2020 A,D 80 dv/dt PD TJ, TSTG TL Symbol RqJA AOB190A60L RqJC www.aosmd.com AOT190A60L 65 0.6 V/ns Units °C/W °C/W Page 1 of 6 AOB190A60L/AOT190A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V VDS=5V, ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS ID=250μA, VGS=0V, TJ=150°C 700 ID=250μA, VGS=0V 0.59 V o V/ C VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 mA ±100 nA 4 4.6 V VGS=10V, ID=7.6A 0.17 0.19 Ω Forward Transconductance VDS=10V, ID=10A 16 VSD Diode Forward Voltage IS=10A,VGS=0V IS ISM V Maximum Body-Diode Continuous Current 20 A Maximum Body-Diode Pulsed Current C 80 A Coss Output Capacitance Co(er) Effective output capacitance, energy H related Crss Effective output capacitance, time I related Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=100V, f=1MHz 0.85 S 1.2 DYNAMIC PARAMETERS Ciss Input Capacitance Co(tr) 3.2 1935 pF 55 pF 49 pF 213 pF 1.25 pF 5 Ω 34 nC 15 nC VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=10A Qgs Gate Source Charge Qgd Gate Drain Charge 8.5 nC tD(on) Turn-On DelayTime 80 ns tr Turn-On Rise Time 70 ns tD(off) Turn-Off DelayTime 80 ns tf trr Turn-Off Fall Time 20 ns 341 ns Irm Peak Reverse Recovery Current 28 Qrr Body Diode Reverse Recovery Charge A mC VGS=10V, VDS=400V, ID=10A, RG=25W Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/ms, VDS=400V 6.8 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using