AOT20C60L

AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 145A RDS(ON),max < 0.25Ω Applications 100% UIS Tested 100% Rg Tested Qg,typ 52nC Eoss @ 400V 8.5µJ • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Top View TO-220 TO-263 D2PAK TO-220F D D G D AOT20C60 S G AOTF20C60 D G S S G AOB20C60 S Orderable Part Number Package Type Form Minimum Order Quantity AOT20C60L AOB20C60L AOTF20C60 TO-220 Green TO-263 Green TO-220F Pb Free Tube Tape & Reel Tube 1000 800 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT20C60/AOB20C60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C AOTF20C60 ±30 ID V 20 20* 11 11* IDM Units V A 145 Avalanche Current C,J IAR 20 A Repetitive avalanche energy C,J EAR 200 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS 1470 100 20 mJ dv/dt PD 50 3.7 0.4 TL -55 to 150 W W/°C °C 300 °C AOT20C60/AOB20C60 AOTF20C60 Units 65 65 °C/W 0.5 0.27 -2.5 °C/W °C/W RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.3.0 December 2013 463 TJ, TSTG Symbol RθJA V/ns www.aosmd.com Page 1 of 6 AOT20C60/AOB20C60/AOTF20C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.55 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A gFS Forward Transconductance VDS=40V, ID=10A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 ±100 3 µA 4 5 nΑ V 0.21 0.25 Ω 1 V S IS Maximum Body-Diode Continuous Current 20 A ISM Maximum Body-Diode Pulsed Current C 145 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H VGS=0V, VDS=100V, f=1MHz 3440 pF 145 pF 98 pF 185 pF VGS=0V, VDS=0 to 480V, f=1MHz Crss Effective output capacitance, time related I Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 5 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 Ω Co(tr) SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd 52 VGS=10V, VDS=480V, ID=20A 74 nC 22 nC Gate Drain Charge 14 nC tD(on) Turn-On DelayTime 74 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=300V, ID=20A, RG=25Ω 76 ns 100 ns 45 ns IF=20A,dI/dt=100A/µs,VDS=100V 665 Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V 14 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using