AOT20N25L

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 300V@150℃ 20A RDS(ON) (at VGS=10V) < 0.17Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT20N25L Top View D TO-220 G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C AOT20N25 250 Units V ±30 V 20 ID 14 A Pulsed Drain Current C IDM Avalanche Current C IAS 4.5 A Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 608 5 208 mJ V/ns W 1.7 -55 to 150 W/ oC °C 300 °C AOT20N25 65 Units °C/W 0.5 0.6 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case Rev0: Oct 2011 51 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com Page 1 of 5 AOT20N25 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 250 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ID=250µA, VGS=0V, TJ=150°C 300 V ID=250µA, VGS=0V 0.25 V/ oC VDS=250V, VGS=0V 1 VDS=200V, TJ=125°C 10 ±100 3.2 µA 3.8 4.5 nΑ V 0.17 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A 0.14 gFS Forward Transconductance VDS=40V, ID=10A 16 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 20 A ISM Maximum Body-Diode Pulsed Current 51 A 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=200V, ID=20A 1.9 S 1028 pF 167 pF 11 pF 3.9 5.9 20 25 Ω nC 5.7 nC Gate Drain Charge 8 nC Turn-On DelayTime 27 ns 31 ns VGS=10V, VDS=125V, ID=20A, RG=25Ω 70 ns 25 ns IF=20A,dI/dt=100A/µs,VDS=100V 179 Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V 1.6 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using