AOT20S60L

AOT20S60/AOB20S60/AOTF20S60 600V 20A α MOS TM General Description Product Summary The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 80A RDS(ON),max 0.199Ω Qg,typ 20nC Eoss @ 400V 4.9µJ Power Transistor 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT20S60L & AOB20S60L & AOTF20S60L Top View TO-220 TO-263 2 D D PAK TO-220F(3kVAC; 1s) D S G G AOT20S60 D D G S S AOB20S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT20S60/AOB20S60 VDS Drain-Source Voltage AOTF20S60 600 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C ID S G AOTF20S60 20 14 AOTF20S60L Units V V 20* 20* 14* 14* A Pulsed Drain Current C IDM 80 Avalanche Current C IAR 3.4 A Repetitive avalanche energy C EAR 23 mJ Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range 50 37.8 W 2.1 0.4 0.3 W/ oC 100 20 -55 to 150 TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. mJ 266 dv/dt Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Rev 5: Sep 2012 188 EAS PD V/ns °C 300 °C AOT20S60/AOB20S60 AOTF20S60 AOTF20S60L 65 65 65 °C/W 0.5 0.47 -2.5 -3.3 °C/W °C/W www.aosmd.com Units Page 1 of 7 AOT20S60/AOB20S60/AOTF20S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 600 - - ID=250µA, VGS=0V, TJ=150°C 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.8 3.4 4.1 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=10A, TJ=25°C - 0.18 0.199 Ω VGS=10V, ID=10A, TJ=150°C - 0.48 0.53 Ω IS=10A,VGS=0V, TJ=25°C - 0.84 - V Maximum Body-Diode Continuous Current - - 20 A Maximum Body-Diode Pulsed CurrentC - - 80 A - 1038 - pF - 68 - pF - 56.6 - pF - 176.5 - pF VGS=0V, VDS=100V, f=1MHz - 2.1 - pF VGS=0V, VDS=0V, f=1MHz - 9.3 - Ω - 19.8 - nC - 4.6 - nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=10A Qgs Gate Source Charge Qgd Gate Drain Charge - 7.6 - nC tD(on) Turn-On DelayTime - 27.5 - ns tr Turn-On Rise Time - 32 - ns tD(off) Turn-Off DelayTime - 87.5 - ns tf trr Turn-Off Fall Time - 30 - ns VGS=10V, VDS=400V, ID=10A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=10A,dI/dt=100A/µs,VDS=400V - 350 - ns Irm IF=10A,dI/dt=100A/µs,VDS=400V - 27 - Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V - 5.7 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using