AOT240L

AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description Product Summary The AOT240L & AOB240L & AOTF240L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. VDS ID (at VGS=10V) 40V 105A/85A RDS(ON) (at VGS=10V) < 2.9mΩ (< 2.6mΩ∗) RDS(ON) (at VGS=4.5V) < 3.7mΩ (< 3.5mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT240L D S AOTF240L G D S S AOB240L S G Orderable Part Number Package Type Form Minimum Order Quantity AOT240L AOB240L AOTF240L TO-220 TO-263 TO-220F Tube Tape & Reel Tube 1000 800 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT240L/AOB240L Symbol Drain-Source Voltage 40 VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Rev.3.0: November 2013 IAS 68 A EAS 231 mJ 176 41 88 20 1.9 TJ, TSTG Steady-State Steady-State RθJA RθJC -55 to 175 AOT240L/AOB240L 15 65 0.85 www.aosmd.com W W 1.2 Symbol t ≤ 10s A A 16 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 60 20 PD TA=25°C V 400 IDSM TA=70°C Units V 85 82 IDM TA=25°C Continuous Drain Current ±20 105 ID TC=100°C AOTF240L °C AOTF240L 15 65 3.6 Units °C/W °C/W °C/W Page 1 of 7 AOT240L/AOB240L/AOTF240L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 1 TJ=125°C TO220/TO220F VGS=10V, ID=20A Static Drain-Source On-Resistance TO263 VGS=4.5V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 1.7 2.2 V 2.4 2.9 3.7 4.7 3 3.7 mΩ 2.1 2.6 mΩ 2.7 3.5 mΩ A 78 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 400 VGS=4.5V, ID=20A Coss V 5 VGS=10V, ID=20A TO220/TO220F Units 1 TJ=55°C IGSS Max 40 VDS=40V, VGS=0V VGS(th) RDS(ON) Typ S 1 V 105 A 3510 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 mΩ pF 1070 pF 68 pF 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 49 72 nC Qg(4.5V) Total Gate Charge 22 32 nC VGS=10V, VDS=20V, ID=20A Qgs Gate Source Charge 9 nC Qgd Gate Drain Charge 7 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 10 ns tD(off) Turn-Off DelayTime 38 ns tf Turn-Off Fall Time 11 ns ns nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 58 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using