AOT2502L

AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 150V 106A RDS(ON) (at VGS=10V) < 11mΩ (10.7mΩ*) 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO-220 TO-263 D2PAK Top View D Bottom View Top View Bottom View D D D D G G D S S D G G S G AOB2502L AOT2502L S S Orderable Part Number Package Type Form Minimum Order Quantity AOT2502L AOB2502L TO-220 TO-263 Tube Tape & Reel 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike Power Dissipation B L=0.3mH C 10µs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case IAS 40 A EAS 240 mJ VSPIKE 180 V 277 Steady-State Steady-State W 111 8.3 W 5.3 TJ, TSTG Symbol t ≤ 10s A 14.5 PDSM TA=70°C A 18.5 PD TC=100°C V 250 IDSM TA=70°C ±20 67 IDM TA=25°C Continuous Drain Current Units V 106 ID TC=100°C C Maximum 150 RθJA RθJC -55 to 150 Typ 12 50 0.35 °C Max 15 60 0.45 Units °C/W °C/W °C/W * Surface mount package TO-263 Rev.1.0: December 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 150 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA TJ=55°C TO-220 VGS=10V, ID=20A 3.5 TJ=125°C ±100 nA 4.3 5.1 V 9.2 11 17.8 21.5 8.9 10.7 mΩ 1 V 106 A gFS Forward Transconductance VDS=5V, ID=20A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=75V, f=1MHz Gate Source Charge Qgd tD(on) VGS=10V, VDS=75V, ID=20A 1 mΩ S 3010 pF 345 pF 14 f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 5 TO-263 Coss Units 1 VGS=10V, ID=20A Static Drain-Source On-Resistance Max V VDS=150V, VGS=0V IDSS RDS(ON) Typ pF 2 3 Ω 43 60 nC 18 nC Gate Drain Charge 10 nC Turn-On DelayTime 19 ns 24 ns 30 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=75V, RL=3.75Ω, RGEN=3Ω 8.5 ns IF=20A, dI/dt=500A/µs 75 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 880 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 10V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZθJC Normalized Transient Thermal Resistance Coss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: December 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 400 Current rating ID(A) Power Dissipation (W) 100 300 200 100 80 60 40 20 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 0 150 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 1000 TA=25°C Power (W) 100 10 1 0.001 0.01 0.1 1 10 100 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: December 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: December 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6