AOT2606L

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 72A RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT2606L D S AOTF2606L G D S VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V 38 A 260 13 IDSM TA=70°C Units V 54 56 IDM TA=25°C AOTF2606L G ±20 72 ID TC=100°C C S AOB2606L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT2606L/AOB2606L VDS Drain-Source Voltage 60 Gate-Source Voltage S A 10 Avalanche Current C IAS 60 A Avalanche energy L=0.1mH C EAS 180 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C 36.5 18 2.1 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 115 57.5 Symbol t ≤ 10s Steady-State Steady-State W 1.3 TJ, TSTG RθJA RθJC -55 to 175 AOT2606L/AOB2606L 15 60 1.3 W °C AOTF2606L 15 60 4.1 Units °C/W °C/W °C/W * Surface mount package TO263 Rev 1 : Mar. 2012 www.aosmd.com Page 1 of 7 AOT2606L/AOB2606L/AOTF2606L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 260 VGS=10V, ID=20A TJ=125°C VGS=10V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V µA 5 IGSS TO220/TO220F Units 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz ±100 nA 3 3.5 V 5.4 6.5 8.5 10.5 5.1 6.2 mΩ 1 V 72 A A 75 0.7 mΩ S 4050 pF 345 pF 16.8 pF 0.65 1.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 53 75 nC Qg(4.5V) Total Gate Charge 22 31 nC Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A 0.3 17 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 33 ns 4 ns IF=20A, dI/dt=500A/µs 26 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 125 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using