AOT260L

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =6V) 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View 60V 140A < 2.5mW < 2.9mW Bottom View Top View Bottom View D D D D D D S G AOT260L S D G G S G Gate-Source Voltage VGS TC=25°C Pulsed Drain Current C Avalanche Current C C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0 : November 2013 Steady-State Steady-State A IAS, IAR 128 A EAS, EAR 819 mJ 330 W 165 1.9 RqJA RqJC W 1.2 TJ, TSTG Symbol t ≤ 10s A 16 PDSM TA=70°C V 20 PD TC=100°C ±20 500 IDSM TA=70°C Units V 110 IDM TA=25°C Continuous Drain Current Maximum 60 140 ID TC=100°C S S AOB260L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G G -55 to 175 Typ 12 54 0.35 www.aosmd.com °C Max 15 65 0.45 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250mA 2.2 VGS=10V, VDS=5V 500 V TJ=55°C 5 mA 100 nA 2.7 3.2 V 2 2.5 3.1 3.9 VGS=6V, ID=20A TO220 2.2 2.9 mW VGS=10V, ID=20A TO263 1.7 2.2 mW 1.9 68 2.5 mW S VGS=10V, ID=20A TO220 Static Drain-Source On-Resistance Units 1 Zero Gate Voltage Drain Current RDS(ON) Max 60 VDS=60V, VGS=0V IDSS ID(ON) Typ TJ=125°C A mW gFS Forward Transconductance VGS=6V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 1 V VSD Diode Forward Voltage IS=75A,VGS=0V 0.85 1.3 V IS Maximum Body-Diode Continuous CurrentG 140 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr Turn-Off Fall Time VGS=10V, VDS=30V, ID=20A 9400 11800 14200 pF 1090 1360 1770 pF 32 40 68 pF 0.5 1 1.5 W 120 150 180 nC 28 40 52 nC 9 15 25 nC VGS=10V, VDS=30V, RL=1.5W, RGEN=3W 30 ns 27 ns 74 ns 12 IF=20A, dI/dt=500A/ms Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 22 140 32 200 ns 42 260 ns nC A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using