AOT2618L

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary The AOT2618L & AOB2618L & AOTF2618L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 60V 23A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 19mΩ RDS(ON) (at VGS=4.5V) < 25mΩ 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT2618L D S AOTF2618L G D Gate-Source Voltage VGS TC=25°C Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0 : July 2012 7 Steady-State Steady-State A 23 A EAS 26 mJ 41.5 23.5 20.5 11.5 2.1 TJ, TSTG RθJA RθJC -55 to 175 AOT2618L/AOB2618L 15 60 3.6 www.aosmd.com W W 1.3 Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range 16 5.5 PD TA=25°C V 70 IDSM TA=70°C Units V 22 18 IDM TA=25°C Continuous Drain Current AOTF2618L G ±20 23 ID TC=100°C C S AOB2618L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT2618L/AOB2618L Symbol Drain-Source Voltage VDS 60 Continuous Drain Current G S S °C AOTF2618L 15 60 6.4 Units °C/W °C/W °C/W Page 1 of 7 AOT2618L/AOB2618L/AOTF2618L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 70 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 nA 1.95 2.5 V 15.8 19 29.3 35.5 19.5 25 mΩ S 1 V 23 A A 45 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Coss V 5 IGSS gFS Units 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz 950 pF 108 pF 7 VGS=0V, VDS=0V, f=1MHz 1 mΩ 2 pF Ω 3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 20 nC Qg(4.5V) Total Gate Charge 6 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=30V, ID=20A VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 3 nC 1.6 nC 7.5 ns 31 ns 18 ns tf Turn-Off Fall Time 40 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 70 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using