AOT264L

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 140A RDS(ON) (at VGS=10V) < 3.2mΩ (< 3.0mΩ ) RDS(ON) (at VGS = 6V) < 3.5mΩ (< 3.3mΩ ∗) ∗ 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Bottom View Top View Bottom View D D D D D G D D S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C TA=25°C Avalanche Current Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A A IAS, IAR 100 A EAS, EAR 500 mJ 333 W 167 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 19 PDSM TA=70°C ±20 15 PD TC=100°C Units V 110 IDSM C Maximum 60 480 IDM TA=70°C S S 140 ID TC=100°C Continuous Drain Current G G -55 to 175 Typ 12 48 0.35 °C Max 15 60 0.45 Units °C/W °C/W °C/W * Surface mount package TO263 Rev.2. 0: August 2013 www.aosmd.com Page 1 of 6 AOT264L/AOB264L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max 60 V VDS=60V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 480 Units 100 nA 2.7 3.2 V 2.4 3.2 4 4.8 VGS=6V, ID=20A TO220 2.7 3.5 VGS=10V, ID=20A TO263 2.3 3.0 2.6 80 3.3 Forward Transconductance VGS=6V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous CurrentG VGS=10V, ID=20A TO220 RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 5500 VGS=0V, VDS=30V, f=1MHz Gate Source Charge 6960 mΩ S 1 V 140 A 8400 840 pF pF 30 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs A pF 0.4 0.9 1.4 Ω 60 75 90 nC VGS=10V, VDS=30V, ID=20A 25 nC nC Qgd Gate Drain Charge 5 tD(on) Turn-On DelayTime 23 ns tr Turn-On Rise Time 7 ns VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 45 ns 8 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 18 26 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 105 155 202 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using