AOT270AL

AOT270AL/AOB270AL 75V N-Channel MOSFET General Description Product Summary The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 75V 140A RDS(ON) (at VGS=10V) < 2.6mΩ (< 2.4mΩ ) RDS(ON) (at VGS=6V) < 3.2mΩ (< 3.0mΩ ∗) ∗ 100% UIS Tested 100% Rg Tested TO-263 TO220 Top View Bottom Top View D Bottom View D D D G D S S D D G G S G G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Rev 0 : Dec. 2012 Steady-State Steady-State A IAS 120 A EAS 720 mJ 500 W 250 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A 17 PDSM TA=70°C V 21.5 PD TC=100°C ±20 560 IDSM TA=70°C Units V 110 IDM TA=25°C Continuous Drain Current Maximum 75 140 ID TC=100°C C S S °C -55 to 175 Typ 12 50 0.25 www.aosmd.com Max 15 60 0.3 Units °C/W °C/W °C/W Page 1 of 6 AOT270AL/AOB270AL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 560 VGS=10V, ID=20A TJ=125°C VGS=6V, ID=20A TO220 VGS=10V, ID=20A TO263 TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2.7 3.3 V 2.15 2.6 3.25 4 2.55 3.2 1.95 2.4 3.0 3.8 2.35 3.0 A 0.66 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=37.5V, ID=20A Gate Source Charge 0.3 mΩ S 1 V 140 A 10830 VGS=0V, VDS=37.5V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 80 DYNAMIC PARAMETERS Ciss Input Capacitance Coss V 5 IGSS Static Drain-Source On-Resistance Units 1 TJ=55°C TO220 Max 75 VDS=75V, VGS=0V VGS(th) RDS(ON) Typ pF 1520 pF 97 pF 0.75 1.2 Ω 147 206 nC 38.5 nC Qgd Gate Drain Charge 30 nC tD(on) Turn-On DelayTime 30 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime 66 ns tf Turn-Off Fall Time 18 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 53 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 438 ns nC VGS=10V, VDS=37.5V, RL=1.9Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using