AOT282L

AOT282L/AOB282L 80V N-Channel MOSFET General Description Product Summary The AOT282L & AOB282L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 80V 105A RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ ) RDS(ON) (at VGS=6V) < 5.2mΩ (< 4.9mΩ ∗) 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View ∗ Bottom View Top View D Bottom View D D D D G G D S S D S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A A IAS 80 A EAS 320 mJ 272.5 W 136 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 14.5 PDSM TA=70°C ±20 18.5 PD TC=100°C Units V 420 IDSM TA=70°C Maximum 80 82 IDM TA=25°C Continuous Drain Current S S 105 ID TC=100°C G G -55 to 175 Typ 12 48 0.35 °C Max 15 60 0.55 Units °C/W °C/W °C/W * Surface mount package TO263 Rev 0 : August 2012 www.aosmd.com Page 1 of 6 AOT282L/AOB282L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max 80 V VDS=80V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 420 Units ±100 nA 2.85 3.5 V 2.9 3.5 4.5 5.5 VGS=6V, ID=20A TO220 3.7 5.2 VGS=10V, ID=20A TO263 2.6 3.2 3.4 60 4.9 Forward Transconductance VGS=6V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G VGS=10V, ID=20A TO220 RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz A S 1 V 105 A 7765 pF 960 pF 66 VGS=0V, VDS=0V, f=1MHz pF Ω 1 1.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 127 178 Qg(4.5V) Total Gate Charge 58 nC VGS=10V, VDS=40V, ID=20A 0.5 mΩ nC Qgs Gate Source Charge 35 nC Qgd Gate Drain Charge 21 nC tD(on) Turn-On DelayTime 24 ns tr Turn-On Rise Time 18 ns tD(off) Turn-Off DelayTime 55 ns tf Turn-Off Fall Time 17 ns ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 40 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 320 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using