AOT2904

AOT2904/AOB2904 100V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized fast-switching applications ID (at VGS=10V) 100V 120A RDS(ON) (at VGS=10V) < 4.4mW < 4.2mW* RDS(ON) (at VGS=6V) < 5.5mW < 5.2mW* Applications • Industrial • BMS battery protection • Synchronous Rectifiers in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Top View Bottom View Bottom View D D D D D G D S S AOT2904 D G G G S G S S AOB2904 Orderable Part Number Package Type Form Minimum Order Quantity AOT2904 AOB2904 TO-220 TO-263 Tube Tape & Reel 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C TA=25°C Continuous Drain Current Avalanche energy L=0.1mH VDS Spike I 10μs TC=25°C Power Dissipation B C TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State * Surface mount package TO263(AOB2904) Rev.2.0: August 2020 V A 425 29 IDSM Avalanche Current C ±20 120 IDM TA=70°C Units V 120 ID TC=100°C Maximum 100 A 23 IAS 77 A EAS 296 mJ VSPIKE 120 V 326 PD W 163 8.3 PDSM TJ, TSTG Symbol RqJA RqJC W 5.3 -55 to 175 Typ 12 50 0.36 www.aosmd.com °C Max 15 60 0.46 Units °C/W °C/W °C/W Page 1 of 6 AOT2904/AOB2904 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA TJ=55°C ±100 nA 2.75 3.3 V TO-220 3.6 4.4 TJ=125°C 6.3 7.7 VGS=6V, ID=20A TO-220 4.1 5.5 mΩ VGS=10V, ID=20A TO-263 3.4 4.2 VGS=6V, ID=20A TO-263 3.9 5.2 mΩ mΩ 2.3 Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz Gate Source Charge Qgd mΩ S 1 V 120 A 7085 pF 605 pF 32 f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs μA 5 gFS Coss Units 1 VGS=10V, ID=20A Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=50V, ID=20A 0.7 pF 1.5 2.3 Ω 93 135 nC 23 nC Gate Drain Charge 16 nC tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 22 ns tD(off) Turn-Off DelayTime 58 ns tf trr Turn-Off Fall Time 20 ns IF=20A, di/dt=500A/ms 49 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 460 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=0.46°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: August 2020 www.aosmd.com Page 4 of 6 AOT2904/AOB2904 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 140 350 120 Current rating I D (A) Power Dissipation (W) 300 250 200 150 100 100 80 60 40 20 50 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=60°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: August 2020 www.aosmd.com Page 5 of 6 AOT2904/AOB2904 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: August 2020 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6