AOT2910L/AOB2910L/AOTF2910L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2910L & AOB2910L & AOTF2910L uses trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
VDS
100V
30A / 22A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 24mΩ (* 23.5mΩ)
RDS(ON) (at VGS=4.5V)
< 33mΩ (* 32.5mΩ)
100% UIS Tested
100% Rg Tested
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
G
AOT2910L
D
S
AOTF2910L
G
D
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
IAS
15
A
EAS
11
mJ
50
27
25
13.5
2.1
TJ, TSTG
Steady-State
Steady-State
RθJA
RθJC
-55 to 175
AOT2910L/AOB2910L
15
60
3
W
W
1.3
Symbol
t ≤ 10s
A
A
4.5
PDSM
Junction and Storage Temperature Range
15.5
6.0
PD
TA=25°C
V
80
IDSM
TA=70°C
Units
V
22
21
IDM
TA=25°C
Continuous Drain
Current
AOTF2910L
G
±20
30
ID
TC=100°C
C
S
AOB2910L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT2910L/AOB2910L
VDS
Drain-Source Voltage
100
Continuous Drain
Current
S
S
°C
AOTF2910L
15
60
5.5
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev 0 : Oct. 2012
www.aosmd.com
Page 1 of 7
AOT2910L/AOB2910L/AOTF2910L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Max
Units
V
VDS=100V, VGS=0V
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
±100
nA
2.15
2.7
V
19
24
34
43
TO220/TO220F
VGS=10V, ID=20A
24.5
33
TO263
VGS=4.5V, ID=18A
18.5
23.5
24
32.5
VGS=10V, ID=20A
TO220/TO220F
TJ=125°C
A
VGS=4.5V, ID=18A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
40
0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
0.5
mΩ
mΩ
mΩ
S
1
V
30
A
1190
pF
95
pF
7
VGS=0V, VDS=0V, f=1MHz
mΩ
1.1
pF
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16.5
25
nC
Qg(4.5V) Total Gate Charge
7
12
nC
VGS=10V, VDS=50V, ID=20A
Qgs
Gate Source Charge
4.5
nC
Qgd
Gate Drain Charge
2.5
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
8
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
20
ns
3
ns
IF=20A, dI/dt=500A/µs
30
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
145
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
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