AOT2910L

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 30A / 22A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 24mΩ (* 23.5mΩ) RDS(ON) (at VGS=4.5V) < 33mΩ (* 32.5mΩ) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT2910L D S AOTF2910L G D Gate-Source Voltage VGS TC=25°C Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case IAS 15 A EAS 11 mJ 50 27 25 13.5 2.1 TJ, TSTG Steady-State Steady-State RθJA RθJC -55 to 175 AOT2910L/AOB2910L 15 60 3 W W 1.3 Symbol t ≤ 10s A A 4.5 PDSM Junction and Storage Temperature Range 15.5 6.0 PD TA=25°C V 80 IDSM TA=70°C Units V 22 21 IDM TA=25°C Continuous Drain Current AOTF2910L G ±20 30 ID TC=100°C C S AOB2910L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT2910L/AOB2910L VDS Drain-Source Voltage 100 Continuous Drain Current S S °C AOTF2910L 15 60 5.5 Units °C/W °C/W °C/W * Surface mount package TO263 Rev 0 : Oct. 2012 www.aosmd.com Page 1 of 7 AOT2910L/AOB2910L/AOTF2910L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 Typ Max Units V VDS=100V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 80 ±100 nA 2.15 2.7 V 19 24 34 43 TO220/TO220F VGS=10V, ID=20A 24.5 33 TO263 VGS=4.5V, ID=18A 18.5 23.5 24 32.5 VGS=10V, ID=20A TO220/TO220F TJ=125°C A VGS=4.5V, ID=18A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 40 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Coss VGS=0V, VDS=50V, f=1MHz Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 0.5 mΩ mΩ mΩ S 1 V 30 A 1190 pF 95 pF 7 VGS=0V, VDS=0V, f=1MHz mΩ 1.1 pF 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16.5 25 nC Qg(4.5V) Total Gate Charge 7 12 nC VGS=10V, VDS=50V, ID=20A Qgs Gate Source Charge 4.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time 8 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 20 ns 3 ns IF=20A, dI/dt=500A/µs 30 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 145 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using