AOT2916L

AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary The AOT2916L & AOTF2916L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 23A / 17A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 34mΩ RDS(ON) (at VGS=4.5V) < 43.5mΩ 100% UIS Tested 100% Rg Tested Top View TO-220 D TO-220F G AOT2916L G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State 12 5 A A 4 IAS 8 A EAS 3 mJ 41.5 23.5 20.5 11.5 2.1 TJ, TSTG RθJA RθJC -55 to 175 AOT2916L 15 60 3.6 www.aosmd.com W W 1.3 Symbol t ≤ 10s V 50 PDSM Junction and Storage Temperature Range Units V 17 16 PD TA=25°C Rev 0 : Oct. 2012 ±20 IDSM TA=70°C AOTF2916L 100 IDM TA=25°C Continuous Drain Current S 23 ID TC=100°C C D AOT2916L VGS TC=25°C Continuous Drain Current Pulsed Drain Current G AOTF2916L S °C AOTF2916L 15 60 6.4 Units °C/W °C/W °C/W Page 1 of 7 AOT2916L/AOTF2916L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 TJ=55°C VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 50 ±100 nA 2 2.7 V 28 34 51 62 VGS=4.5V, ID=3A 35 43.5 28 mΩ S 1 V 23 A VGS=10V, ID=10A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate-Body leakage current Output Capacitance Units 1 IGSS Coss Max V VDS=100V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz A 0.75 mΩ 870 pF 68 pF 3.5 pF 7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 20 nC Qg(4.5V) Total Gate Charge 5.5 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=10A VGS=10V, VDS=50V, RL=5Ω, RGEN=3Ω 2.5 nC 2 nC 7.5 ns 3.5 ns 23 ns tf Turn-Off Fall Time 5.5 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 88 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using