AOT292L

AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT TM General Description Product Summary VDS TM • Trench Power AlphaSGT technology • Low RDS(ON) • RoHS and Halogen Free Compliant Applications ID (at VGS=10V) 100V 105A RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.1mW ) RDS(ON) (at VGS=6V) < 5.3mΩ (< 4.9mW ) * * 100% UIS Tested 100% Rg Tested • Synchronous Rectification for power supply • Ideal for boost converters Top View TO-220 D TO-263 TO-220F D G G AOT292L D S G AOTF292L D S S S AOB292L G Orderable Part Number Package Type Form Minimum Order Quantity AOT292L AOTF292L AOB292L TO-220 TO-220F TO-263 Tube Tube Tape & Reel 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Pulsed Drain Current C TA=25°C Continuous Drain Avalanche Current Avalanche energy VDS Spike I Power Dissipation B L=0.1mH C 10μs TC=25°C TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Steady-State Maximum Junction-to-Case V 82 50 A 420 14.5 IDSM C Units V 70 IDM TA=70°C Current ±20 105 ID TC=100°C AOTF292L 100 VGS TC=25°C Continuous Drain Current G** AOT(B)292L A 11.5 IAS 60 A EAS 180 mJ VSPIKE PD 120 47 150 23 2.1 PDSM -55 to 175 AOT(B)292L RqJC °C AOTF292L 15 60 RqJA 0.5 W W 1.3 TJ, TSTG Symbol V 300 3.2 Units °C/W °C/W °C/W * Surface mount package TO263 ** Package limited for TO220 & TO263 Rev.3.0: August 2020 www.aosmd.com Page 1 of 7 AOT292L/AOB292L/AOTF292L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA TJ=55°C 5 ±100 nA 3.4 V 3.7 4.5 6.1 7.4 VGS=6V, ID=20A TO220/TO220F 4.2 5.3 mΩ VGS=10V, ID=20A TO263 3.3 4.1 mΩ 3.8 90 4.9 mΩ S 0.68 1 V 105 A 50 A gFS Forward Transconductance VGS=6V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current(TO220/TO263) 2.3 TJ=125°C G Maximum Body-Diode Continuous Current(TO220F) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA 2.8 TO220/TO220F IS Units 1 VGS=10V, ID=20A Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz mΩ 6775 pF 557 pF 32 pF 0.8 1.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 90 126 nC Qg(4.5V) Total Gate Charge 40 60 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=50V, ID=20A 0.4 24 nC Gate Drain Charge 13.5 nC tD(on) Turn-On DelayTime 20 ns tr Turn-On Rise Time 11.5 ns tD(off) Turn-Off DelayTime 48 ns tf trr Turn-Off Fall Time 10 ns IF=20A, di/dt=500A/ms 50 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 380 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9A: Maximum Forward Biased Safe Operating Area for TO220 & TO263 (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10A: Single Pulse Power Rating Junction-toCase for TO220 & TO263 (Note F) 1000.0 1000 RDS(ON) limited 1ms DC 1.0 0.0 0.01 800 100ms 10.0 0.1 TJ(Max)=175°C TC=25°C 10ms TJ(Max)=175°C TC=25°C 0.1 10ms 100ms 1s 600 400 200 1 10 100 1000 VDS (Volts) VGS> or equal to 6V Figure 9B: Maximum Forward Biased Safe Operating Area for TO220F (Note F) Rev.3.0: August 2020 Power (W) ID (Amps) 60 1000 10.0 100.0 40 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 20 0 0.0001 www.aosmd.com 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10B: Single Pulse Power Rating Junction-toCase for TO220F (Note F) Page 4 of 7 AOT292L/AOB292L/AOTF292L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 120 Power Dissipation (W) 300 100 Current rating ID (A) 250 200 150 100 80 60 40 20 50 0 0 0 25 50 75 100 125 150 175 0 50 100 40 80 30 20 10 25 50 75 100 125 150 175 TCASE (°C) Figure 12A: Current De-rating for TO220 & TO263 (Note F) Current rating ID (A) Power Dissipation (W) TCASE (°C) Figure 11A: Power De-rating for TO220 & TO263 (Note F) 0 60 40 20 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 11B: Power De-rating for TO220F (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 12B: Current De-rating for TO220F (Note F) 100000 TA=25°C Power (W) 10000 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Ambient (Note H) Rev.3.0: August 2020 www.aosmd.com Page 5 of 7 AOT292L/AOB292L/AOTF292L ZqJA Normalized Transient Thermal Resistance TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=60°C/W 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance (Note H) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=0.5°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 15A: Normalized Maximum Transient Thermal Impedance for TO220 & TO263 (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=3.2°C/W 0.1 PDM Single Pulse 0.01 0.001 1E-05 Ton T 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15B: Normalized Maximum Transient Thermal Impedance for TO220F (Note F) Rev.3.0: August 2020 www.aosmd.com Page 6 of 7 AOT292L/AOB292L/AOTF292L Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.3.0: August 2020 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7