AOT3N50

AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 3A RDS(ON) (at VGS=10V) < 3Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT3N50L & AOTF3N50L TO-220 G D Top View D G S TO-220F G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT3N50 Drain-Source Voltage VDS 500 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF3N50 V 3 ID Units V 3* 1.9 1.9* A Pulsed Drain Current C IDM Avalanche Current C IAR 2 A Repetitive avalanche energy C EAR 60 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 120 5 mJ V/ns W 9 PD 31 0.3 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOT3N50 65 AOTF3N50 65 Units °C/W 0.5 1.7 -4 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev5: July 2010 74 0.6 www.aosmd.com Page 1 of 6 AOT3N50/AOTF3N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C V 600 ID=250µA, VGS=0V V/ oC 0.54 VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 ±100 3.5 µA 4.1 4.5 nΑ V 3 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.5A 2.3 gFS Forward Transconductance VDS=40V, ID=1.5A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.78 S IS Maximum Body-Diode Continuous Current 3 A ISM Maximum Body-Diode Pulsed Current 9 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=3A 221 276 331 pF 25 31.4 38 pF 2.1 2.6 3 pF 1.9 3.9 6 Ω 6.7 8 nC Qgs Gate Source Charge 1.7 2 nC Qgd Gate Drain Charge 2.7 3.2 nC tD(on) Turn-On DelayTime 11 13.2 ns tr Turn-On Rise Time 19 23 ns 20.5 24.6 ns 15 18 ns ns µC VGS=10V, VDS=250V, ID=3A, RG=25Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=3A,dI/dt=100A/µs,VDS=100V 134 161 Qrr Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V 0.89 1.1 Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using