AOT42S60L/AOB42S60L
600V 37A a MOS
TM
Power Transistor
General Description
Product Summary
The AOT42S60L & AOB42S60L have been fabricated
using the advanced aMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these devices can be
adopted quickly into new and existing offline power
supply designs.
VDS @ Tj,max
700V
IDM
166A
RDS(ON),max
0.109W
Qg,typ
40nC
Eoss @ 400V
9.2mJ
100% UIS Tested
100% Rg Tested
Top View
TO-263
D2PAK
TO-220
D
D
D
G
D
G
S
S
S
G
AOT42S60L
AOB42S60L
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT42S60L
AOB42S60L
TO-220 Green
TO-263 Green
Tube
Tape & Reel
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT42S60L/AOB42S60L
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
±30
Units
V
V
37
ID
23
IDM
A
166
Avalanche Current C
IAR
11
A
Repetitive avalanche energy C
EAR
234
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
1345
mJ
W
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev5.1: January 2024
417
PD
3.3
100
20
-55 to 150
W/ oC
300
°C
AOT42S60L/AOB42S60L
Units
65
°C/W
0.5
0.3
°C/W
°C/W
dv/dt
TJ, TSTG
TL
Symbol
RqJA
RqCS
RqJC
www.aosmd.com
V/ns
°C
Page 1 of 6
AOT42S60L/AOB42S60L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
Units
600
-
-
650
700
-
V
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
mA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250mA
2.5
3.2
3.8
nA
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=21A, TJ=25°C
-
0.095
0.109
W
VGS=10V, ID=21A, TJ=150°C
-
0.27
0.31
W
VSD
Diode Forward Voltage
IS=21A,VGS=0V, TJ=25°C
-
0.84
-
V
IS
Maximum Body-Diode Continuous Current
-
-
37
A
ISM
Maximum Body-Diode Pulsed Current
-
-
166
A
-
2154
-
pF
-
135
-
pF
-
103
-
pF
-
344
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.7
-
pF
VGS=0V, VDS=0V, f=1MHz
-
1.7
-
W
-
40
-
nC
-
11.7
-
nC
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
H
related
Co(tr)
Crss
Rg
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=480V, ID=21A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
11.9
-
nC
tD(on)
Turn-On DelayTime
-
38.5
-
ns
tr
Turn-On Rise Time
-
53
-
ns
tD(off)
Turn-Off DelayTime
-
136
-
ns
tf
trr
Turn-Off Fall Time
-
46
-
ns
VGS=10V, VDS=400V, ID=21A,
RG=25W
IF=21A,dI/dt=100A/ms,VDS=400V
-
473
-
ns
IF=21A,dI/dt=100A/ms,VDS=400V
-
38.5
-
Body Diode Reverse Recovery Charge IF=21A,dI/dt=100A/ms,VDS=400V
-
10.5
-
A
mC
Irm
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
Qrr
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
