AOT470

AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary The AOT470/AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. ID (at VGS=10V) 75V 100A RDS(ON) (at VGS=10V) < 10.5mΩ VDS 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Bottom View Top View D D Bottom View D D D G G D S G D S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev2: Mar 2012 Steady-State Steady-State A A IAS, IAR 45 A EAS, EAR 300 mJ 268 W 134 2.1 RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s V 8 PDSM Junction and Storage Temperature Range ±25 10 PD TA=25°C Units V 200 IDSM TA=70°C Maximum 75 78 IDM TA=25°C Continuous Drain Current S S 100 ID TC=100°C G -55 to 175 Typ 10 45 0.45 °C Max 12 60 0.56 Units °C/W °C/W °C/W Page 1 of 6 AOT470/AOB470L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS= ±25V VDS=VGS, ID=250µA Static Drain-Source On-Resistance gFS Forward Transconductance VGS=10V, ID=30A TO263 VDS=5V, ID=30A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance µA µA 1 2.7 4 V 200 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss V 5 2 VGS=10V, VDS=5V TO220 Units 1 TJ=55°C Gate Threshold Voltage On state drain current Max 75 VDS=75V, VGS=0V VGS=10V, ID=30A RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz A 8.3 10.5 13.7 17 8 90 10.2 0.7 mΩ mΩ S 1 V 100 A 3760 4700 5640 pF 280 400 520 pF 110 180 250 pF 1.5 3 4.5 Ω 114 136 nC 33 40 nC 25 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=30V, ID=30A Qgs Gate Source Charge Qgd Gate Drain Charge 18 tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 39 ns tD(off) Turn-Off DelayTime 70 ns tf trr Turn-Off Fall Time 24 ns IF=30A, dI/dt=100A/µs 37 53 70 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 100 143 185 VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω Body Diode Reverse Recovery Time ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using