AOT474L

AOT474/AOTF474 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT(F)474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low R DS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. AOT(F)474/AOT(F)474L are electrically Identical AOT(F)474 -RoHS Compliant AOT(F)474L -Halogen Free TO220FL Bottom View Product Summary VDS ID_TO220 (at V GS=10V) ID_TO220FL (at VGS=10V) RDS(ON) (at VGS=10V) 75V 127A 47A < 11.3mΩ 100% UIS Tested Top View D TO220 Bottom View Top View D S G D S G D G D S S D G G S AOT474 AOTF474 AOTF474 75 ±25 127 89 200 9 7 106 562 417 208 1.9 1.2 -55 to 175 57.5 29 1.9 1.2 9 7 A A mJ W W °C 47 33 A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted AOT474 Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C C VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol A AD t ≤ 10s Steady-State Steady-State RθJA RθJC AOT474 13.9 65 0.36 AOTF474 13.9 65 2.6 Units °C/W °C/W °C/W Rev 0: February 2009 www.aosmd.com Page 1 of 7 AOT474/AOTF474 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance Conditions ID=250µA, VGS=0V VDS=75V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125°C VDS=5V, ID=30A 2.6 200 9.4 18 67 0.73 1 128 2240 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 355 22 1.4 39 VGS=10V, VDS=30V, ID=30A 11 8 VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω IF=30A, dI/dt=500A/µs 35 330 2805 507 36 2.8 49.6 13.8 14 15 34 42 4.5 50 472 65 614 3370 660 50 4.2 60 17 20 11.3 21.5 3.4 Min 75 1 5 100 4 Typ Max Units V µA nA V A mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using