AOT482L

AOT482L/AOB482L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT482L/AOB482L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 80V 105A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.2mΩ RDS(ON) (at VGS = 7V) < 9mΩ 100% UIS Tested 100% Rg Tested TO-263 TO220 Top View Bottom View Top View D D2PAK D Bottom View D D D G G D S S D G G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C Units V V 82 A 330 11 IDSM TA=70°C S S 105 IDM TA=25°C G Maximum 80 ±25 ID TC=100°C S A 9 Avalanche Current C IAS, IAR 82 A Avalanche energy L=0.1mH C EAS, EAR 336 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Pev 0: May 2010 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 167 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 333 PD -55 to 175 Typ 11 47 0.36 www.aosmd.com °C Max 15 60 0.45 Units °C/W °C/W °C/W Page 1 of 7 AOT482L/AOB482L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Min Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V VDS=80V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 330 100 TJ=125°C VGS=7V, ID=20A TO220 VGS=10V, ID=20A TO263 VGS=7V, ID=20A TO263 VDS=5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge µA 50 VGS=10V, ID=20A IS V TJ=55°C Static Drain-Source On-Resistance Units 10 Zero Gate Voltage Drain Current TO220 Max 80 IDSS RDS(ON) Typ VGS=10V, VDS=40V, ID=20A 3.1 nA 3.7 V A 5.9 7.2 11 13 6.8 9 mΩ 5.6 6.9 mΩ 6.5 50 8.7 mΩ S 0.64 mΩ 1 V 105 A 3240 4054 4870 pF 320 458 600 pF 95 160 225 pF 0.2 0.45 0.7 Ω 53 66.8 81 nC 16 20.8 25 nC 12 20.2 30 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 18 26 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 75 108 140 VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω 26 ns 18 ns 48 ns 21 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using