AOT4N60

AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 4A RDS(ON) (at VGS=10V) < 2.2W 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D D S G G D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS TC=100°C C G S AOT4N60 VGS TC=25°C Continuous Drain Current Pulsed Drain Current S AOTF4N60(L) AOT4N60 Gate-Source Voltage D ID AOTF4N60 600 AOTF4N60L ±30 Units V V 4 4* 4* 2.7 2.7* 2.7* A IDM 16 Avalanche Current C IAR 2.5 A Repetitive avalanche energy C EAR 94 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS 188 50 5 35 V/ns dv/dt PD TJ, TSTG TL Symbol RqJA RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.12.0: January 2021 104 0.83 0.28 -55 to 150 mJ 25 W 0.20 W/ oC °C 300 °C AOT4N60 65 AOTF4N60 65 AOTF4N60L 65 Units °C/W 0.5 1.2 -3.6 -5 °C/W °C/W www.aosmd.com Page 1 of 6 AOT4N60/AOTF4N60/AOTF4N60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) VDS=5V ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS ISM ID=250μA, VGS=0V, TJ=150°C 700 ID=250μA, VGS=0V V o V/ C 0.69 VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 mA 4 4.5 nA V VGS=10V, ID=2A 1.9 2.2 W VDS=40V, ID=2A 7.4 IS=1A,VGS=0V 0.77 3 S 1 V Maximum Body-Diode Continuous Current 4 A Maximum Body-Diode Pulsed Current 16 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=4A 400 511 615 pF 40 51 65 pF 3.5 4.4 5.3 pF 3.3 4.2 6.3 W 15 18 nC 3 3.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge 7.6 9.1 nC tD(on) Turn-On DelayTime 20.2 30 ns tr Turn-On Rise Time 28.7 42 ns tD(off) Turn-Off DelayTime 36 51 ns tf trr Turn-Off Fall Time 27 40 ns IF=4A,dI/dt=100A/ms,VDS=100V 212 254 Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/ms,VDS=100V 1.6 1.9 ns mC Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=4A, RG=25W A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using