AOT5N100

AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1100@150℃ 4A RDS(ON) (at VGS=10V) < 4.2W 100% UIS Tested 100% Rg Tested Top View D TO-220F TO-220 G D AOT5N100 S G AOTF5N100 G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT5N100 AOTF5N100 Drain-Source Voltage VDS 1000 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ±30 ID Units V V 4 4* 2.5 2.5* A IDM 15 Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 117 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 235 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG PD 42 0.3 -55 to 150 W/ oC °C 300 °C TL Symbol RqJA RqCS AOT5N100 65 AOTF5N100 65 Units °C/W 0.5 0.64 -3 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.2.0: January 2021 195 1.6 www.aosmd.com Page 1 of 6 AOT5N100/AOTF5N100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 1000 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage Static Drain-Source On-Resistance VDS=5V, ID=250mA gFS Forward Transconductance VDS=40V, ID=2.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM RDS(ON) ID=250μA, VGS=0V, TJ=150°C 1100 V ID=250μA, VGS=0V 1.04 V/ oC VDS=1000V, VGS=0V 1 VDS=800V, TJ=125°C 10 ±100 3.3 VGS=10V, ID=2.5A mA 3.9 4.5 nA V 3.5 4.2 W 5 S 1 V Maximum Body-Diode Continuous Current 4 A Maximum Body-Diode Pulsed Current 15 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 0.73 750 950 1150 pF 40 62 85 pF 3.5 6 9 pF 2 4.3 6.5 W 19 23 nC 15 VGS=10V, VDS=800V, ID=5A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=5A,dI/dt=100A/ms,VDS=100V 350 450 550 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/ms,VDS=100V 4.2 5.5 6.8 Body Diode Reverse Recovery Time VGS=10V, VDS=500V, ID=5A, RG=25W 4.6 nC 6.5 nC 27 ns 40 ns 50 ns 33 ns ns mC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using