AOT600A60L

AOTF600A60L/AOT600A60L/AOB600A60L 600V, a MOS5 General Description TM N-Channel Power Transistor Product Summary • Proprietary aMOS5 technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 700V IDM 32A RDS(ON),max < 0.6Ω Qg,typ 11.5nC Eoss @ 400V 1.8mJ Applications 100% UIS Tested 100% Rg Tested TM • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Server power TO-220F TO-263 D2PAK TO-220 D D G D S AOTF600A60L G D S S G G AOT600A60L S AOB600A60L Orderable Part Number Package Type Form Minimum Order Quantity AOTF600A60L AOT600A60L AOB600A60L TO220F Green TO220 Green TO263 Green Tube Tube Tape &Reel 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain TC=100°C Current Pulsed Drain Current Avalanche Current C C L=1mH 600 Units V VGS ±20 V VGS ±30 ID AOT(B)600A60L AOTF600A60L 8 V 8* 5 5* IDM 32 A IAR 1.6 A Repetitive avalanche energy C EAR 1.3 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 19 100 20 mJ Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D dv/dt PD 300 °C 27.5 0.2 TL Symbol RqJA RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.3.0: September 2020 -55 to 150 W W/°C °C 96 0.8 TJ, TSTG V/ns AOT(B)600A60L AOTF600A60L Units 65 65 °C/W 0.5 1.3 --4.6 °C/W www.aosmd.com Page 1 of 6 AOTF600A60L/AOT600A60L/AOB600A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V VDS=5V, ID=250mA 3.5 RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VGS=10V, ID=2.1A 0.53 gFS Forward Transconductance VDS=10V, ID=2.1A 4.2 VSD Diode Forward Voltage IS=2.1A,VGS=0V 0.8 IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) 700 ID=250μA, VGS=0V 0.59 V V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 C DYNAMIC PARAMETERS Ciss Input Capacitance Coss ID=250μA, VGS=0V, TJ=150°C mA ±100 nA 0.6 Ω V S 1.2 V 8 A 32 A 608 pF 19 pF 21 pF 76 pF VGS=0V, VDS=100V, f=1MHz 1.3 pF f=1MHz 4.6 Ω 11.5 nC 4.2 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=2.1A Qgs Gate Source Charge Qgd Gate Drain Charge 2.8 nC Td(on) Turn-On DelayTime 18 ns Tr Turn-On Rise Time 5.5 ns Td(off) Turn-Off DelayTime 36 ns Tf Trr Turn-Off Fall Time 16 ns Body Diode Reverse Recovery Time 159 ns 13 A mC Irm Peak Reverse Recovery Current Qrr Body Diode Reverse Recovery Charge VGS=10V, VDS=400V, ID=2.1A, RG=5W IF=2.1A, dI/dt=100A/ms, VDS=400V 1.2 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using